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參數(shù)資料
| 型號： | HYB514256B-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| 中文描述： | 256K X 4 FAST PAGE DRAM, 50 ns, PDIP20 |
| 文件頁數(shù)： | 5/22頁 |
| 文件大?。?/td> | 215K |
| 代理商： | HYB514256B-50 |
Semiconductor Group
59
HYB 514256B/BL/BJ/BJL-50/-60/-70
256 K
×
4-DRAM
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 C
Storage temperature range......................................................................................– 55 to + 150 C
Soldering temperature ............................................................................................................260 C
Soldering time.............................................................................................................................10 s
Input/output voltage ........................................................................................................– 1 to + 7 V
Power supply voltage......................................................................................................– 1 to + 7 V
Power dissipation.....................................................................................................................0.6 W
Data out current (short circuit) ................................................................................................50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
DC Characteristics
T
A
= 0 to 70 C;
V
SS
= 0 V;
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
6.5
V
1)
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current, any input
(0 V
≤
V
IN
≤
6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
≤
V
OUT
≤
V
CC
)
Average
V
CC
supply current:
– 1.0
0.8
V
1)
2.4
–
V
1)
–
0.4
V
μ
A
1)
– 10
10
1)
I
O(L)
– 10
10
μ
A
1)
-50 version
-60 version
-70 version
(RAS, CAS, address cycling:
t
RC
=
t
RC
min.)
Standby
V
CC
supply current (RAS = CAS =
V
IH
)
I
CC2
Average
V
CC
supply current, RAS only mode:
-50 version
-60 version
-70 version
(RAS cycling: CAS =
V
IH
:
t
RC
=
t
RC
min.)
I
CC1
–
–
–
90
80
70
mA
mA
mA
2) 3)
2) 3)
2) 3)
–
2
mA
–
I
CC3
–
–
–
90
80
70
mA
mA
mA
2)
2)
2)
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| HYB514265BJ-45 | 256K x 16-Bit EDO-Dynamic RAM |
| HYB314265BJ-45 | 256K x 16-Bit EDO-Dynamic RAM |
| HYB514265BJ-50 | 256K x 16-Bit EDO-Dynamic RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB514256B-60 | 制造商:Siemens 功能描述: |
| HYB514256B-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256B-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| HYB514256BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
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