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參數(shù)資料
| 型號(hào)： | HYB514400BJ-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | Connector Cover; Leaded Process Compatible:No; Enclosure Color:Gray; For Use With:SB 120 Connector; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes |
| 中文描述： | 1M X 4 FAST PAGE DRAM, 50 ns, PDSO20 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-26 |
| 文件頁(yè)數(shù)： | 7/24頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | HYB514400BJ-50 |
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HYB 514400BJ-50/-60
1M
×
4 DRAM
Semiconductor Group
7
1998-10-01
Column address to RAS lead time
t
RAL
t
RCS
t
RCH
t
RRH
t
CLZ
t
OFF
t
OEZ
t
DZC
t
DZO
t
CDD
t
ODD
25
–
30
–
ns
Read command setup time
0
–
0
–
ns
Read command hold time
0
–
0
–
ns
11
Read command hold time referenced to RAS
0
–
0
–
ns
11
CAS to output in low-Z
0
–
0
–
ns
8
Output buffer turn-off delay
0
13
0
15
ns
12
Output buffer turn-off delay from OE
0
13
0
15
ns
12
Data to CAS low delay
0
–
0
–
ns
13
Data to OE low delay
0
–
0
–
ns
13
CAS high to data delay
13
–
15
–
ns
14
OE high to data delay
13
–
15
–
ns
14
Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
t
RWL
t
CWL
t
DS
t
DH
8
–
10
–
ns
Write command pulse width
8
–
10
–
ns
Write command setup time
0
–
0
–
ns
15
Write command to RAS lead time
13
–
15
–
ns
Write command to CAS lead time
13
–
15
–
ns
Data setup time
0
–
0
–
ns
16
Data hold time
10
–
10
–
ns
16
Read-Modify-Write Cycle
Read-write cycle time
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
131
–
150
–
ns
RAS to WE delay time
68
–
80
–
ns
15
CAS to WE delay time
31
–
35
–
ns
15
Column address to WE delay time
43
–
50
–
ns
15
OE command hold time
13
–
15
–
ns
Fast Page Mode Cycle
Fast page mode cycle time
t
PC
t
CP
35
–
40
–
ns
CAS precharge time
10
–
10
–
ns
AC Characteristics
(cont’d)
5, 6
T
A
= 0 to 70
°
C,
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
min. max. min. max.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB514400BJ-80 | 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| HYB514400BT-60 | 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| HYB514400BT-70 | RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 3.3V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88% |
| HYB 514400BJ-60 | 4M × 1-Bit Dynamic RAM(4M × 1位動(dòng)態(tài)RAM) |
| HYB514400BJ-70 | 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB514400BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM |
| HYB514400BJ-60 | 制造商:Siemens 功能描述:Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ |
| HYB514400BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
| HYB514400BJ-80 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| HYB514400BJ-BT60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
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