參數(shù)資料
型號(hào)： HYE18L256160BC-7.5
廠商： INFINEON TECHNOLOGIES AG
英文描述： BJAWBMSpecialty DRAMs Mobile-RAM
中文描述： BJAWBMSpecialty DRAM的移動(dòng)RAM
文件頁(yè)數(shù)： 5/6頁(yè)
文件大小： 569K
代理商： HYE18L256160BC-7.5
OCTS (On-Chip Temperature Sensor):
The built-in temperature sensor adapts the refresh
rate to the actual junction temperature of the chip
without draining any CPU power. (Note: with
standard DRAMs, the refresh rate is set to work at
the max. temperature.)
TCSR (Temperature-Compensated Self-Refresh):
Same as OCTS but externally triggered
CPU power required
Speed:
133 MHz
CAS Latency
: 3-3-3
Density
Part number
Temp.
Power
Power
# of
OCTS TCSR PASR DPD
DS
GREEN
Package
range
supply core
supply I/O
banks
product
128 Mb
8 M x 16
HYB39L128160AT-7.5
0 - 70°C
3.3 V
3.3 V
4
–
–
–
–
–
–
TSOP-54
HYB39L128160AC-7.5
0 - 70°C
3.3 V
3.3 V
4
–
–
–
–
–
–
FBGA-54
HYB25L128160AC-7.5
0 - 70°C
2.5 V
2.5 V / 1.8 V
4
–
X
X
X
–
–
FBGA-54
HYE25L128160AC-7.5
-25 - 85°C
2.5 V
2.5 V / 1.8 V
4
–
X
X
X
–
–
FBGA-54
NEW!
HYB18L128160BF-7.5
0 - 70°C
1.8 V
1.8 V
4
X
–
X
X
X
X
FBGA-54
NEW!
HYE18L128160BF-7.5
-25 - 85°C
1.8 V
1.8 V
4
X
–
X
X
X
X
FBGA-54
NEW!
HYB18L128160BC-7.5
0 - 70°C
1.8 V
1.8 V
4
X
–
X
X
X
–
FBGA-54
NEW!
HYE18L128160BC-7.5
-25 - 85°C
1.8 V
1.8 V
4
X
–
X
X
X
–
FBGA-54
256 Mb
16 M x 16
HYB39L256160AT-7.5
0 - 70°C
3.3 V
3.3 V
4
–
–
–
–
–
–
TSOP-54
HYB39L256160AC-7.5
0 - 70°C
3.3 V
3.3 V
4
–
–
–
–
–
–
FBGA-54
HYB25L256160AC-7.5
0 - 70°C
2.5 V
2.5 V / 1.8 V
4
X
X
X
X
–
–
FBGA-54
HYE25L256160AC-7.5
-25 - 85°C
2.5 V
2.5 V / 1.8 V
4
X
X
X
X
–
–
FBGA-54
HYB25L256160AF-7.5
0 - 70°C
3.3 V
3.3 V or
4
X
X
X
X
–
X
FBGA-54
or 2.5 V
2.5 V / 1.8 V
HYE25L256160AF-7.5
-25 - 85°C
3.3 V
3.3 V or
4
X
X
X
X
–
X
FBGA-54
or 2.5 V
2.5 V / 1.8 V
NEW!
HYB18L256160BF-7.5
0 - 70°C
1.8 V
1.8 V
4
X
–
X
X
X
X
FBGA-54
NEW!
HYE18L256160BF-7.5
-25 - 85°C
1.8 V
1.8 V
4
X
–
X
X
X
X
FBGA-54
NEW!
HYB18L256160BC-7.5
0 - 70°C
1.8 V
1.8 V
4
X
–
X
X
X
–
FBGA-54
NEW!
HYE18L256160BC-7.5
-25 - 85°C
1.8 V
1.8 V
4
X
–
X
X
X
–
FBGA-54
512Mb,Dual
HYB25L512160AC-7.5
3.3V
3.3V or
4
X
–
X
X
–
–
FBGA-54
16 M x 16
0 - 70°C
or 2.5 V
2.5 V / 1.8 V
Product Portfolio
PASR (Partial Array Self-Refresh):
Allows user to select volume of memory needed to
further reduce power consumption
Adjustable from all 4 banks to 1/16 array
DPD (Deep Power-Down):
Maximum power consumption reduction by cutting
off power supply to Mobile-RAM
Data is not retained
DS (Selectable Drive Strength):
Can be adjusted to reflect bus load, e.g. half
strength for point-to-point and full strength for
module applications
相關(guān)PDF資料
PDF描述
HYE18L256160BC-75 DRAMs for Mobile Applications
HYE18L256160BF-75 RES NET ISOLATED 3.9K OHM 8-SIP
HYB25L256160AF-7.5 BJAWBMSpecialty DRAMs Mobile-RAM
HYB25L256160AC 256-Mbit Mobile-RAM
HYB25L256160AC-75 256-Mbit Mobile-RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYE18L256160BCX-7.5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYE18L256160BF-7.5 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM
HYE18L256160BF-75 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications
HYE18L256160BFX-7.5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYE18L256169BF-7.5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:256-Mbit Mobile-RAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*