- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370794 > HYE18P16161AC-60 (INFINEON TECHNOLOGIES AG) MEMORY SPECTRUM PDF資料下載
參數(shù)資料
| 型號： | HYE18P16161AC-60 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | MEMORY SPECTRUM |
| 中文描述： | 記憶譜 |
| 文件頁數(shù)： | 8/33頁 |
| 文件大?。?/td> | 641K |
| 代理商： | HYE18P16161AC-60 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁當(dāng)前第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁
Data Sheet
8
V2.0, 2003-12-16
16M Asynchronous/Page CellularRAM
CellularRAM
HYE18P16161AC-70/L70
HYE18P16161AC-85/L85
1
Overview
1.1
Features
High density (1T1C-cell) Synchronous 16-Mbit Pseudo-Static RAM
Designed for cell phone applications (CellularRAM)
Functional-compatible to conventional low power asynchronous SRAM devices
Organization 1M
×
16
Refresh-free operation
1.8 V single power supply (
V
DD
and
V
DDQ
)
Support of 2.5V and 3.0V I/O voltage options (
V
DDQ
)
Low power optimized design
–
I
STANDBY
= 70
μ
A for L-part and 100
μ
A for standard part (16M), data retention mode
–
I
DPD
= < 25
μ
A (16M), non-data retention mode
Low power features (partly adopted from the JEDEC standardized low power SDRAM specifications)
– Temperature Compensated Self-Refresh (TCSR)
– Partial Array Self-Refresh (PASR)
– Deep Power Down Mode (DPD)
70 ns random access cycle time, 20 ns page mode (read only) cycle time
Byte read/write control by UB/LB
Wireless operating temperature range from -25 °C to +85 °C
P-VFBGA-48 chip-scale package (8
×
6 ball grid)
Table 1
Product Selection
HYE18P16161AC
Min. Random Cycle time (tRC)
Min. Page Read Cycle time (tPC)
Operating current (Icc1)
Stand-by current (Icc2)
Ordering Info
-70
70ns
20ns
20mA
-85
85ns
25ns
17mA
L70
70ns
20ns
20mA
L85
85ns
25ns
17mA
100uA
70uA
(Contact Factory)
H Y E 1 8 P 1 6 1 6 1 A C
16M (x16 Org)
Extended Temp. part
Chip Scale Package
Design Revision number
Device Type
1: Asynch/Page (48-ball)
V
DD
= 1.8 V typ.
PSRAM product
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYE18P16161AC-70 | 16M Asynchronous/Page CellularRAM |
| HYE18P32160AC | 32M Synchronous Burst CellularRAM |
| HYE18P32160AC-96 | 32M Synchronous Burst CellularRAM |
| HYE18P32160ACL125 | JT 8C 8#16 SKT WALL RECP |
| HYE18P32160ACL15 | JT 23C 21#20 2#16 SKT PLUG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYE18P16161AC-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M Asynchronous/Page CellularRAM |
| HYE18P16161AC-85 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M Asynchronous/Page CellularRAM |
| HYE18P16161ACL70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M Asynchronous/Page CellularRAM |
| HYE18P16161ACL85 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M Asynchronous/Page CellularRAM |
| HYE18P32160AC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。