參數(shù)資料
型號: HYE18P32160ACL125
廠商: INFINEON TECHNOLOGIES AG
英文描述: JT 8C 8#16 SKT WALL RECP
中文描述: 32M的同步突發(fā)的CellularRAM
文件頁數(shù): 42/53頁
文件大?。?/td> 1426K
代理商: HYE18P32160ACL125
HYE18P32160AC(-/L)9.6/12.5/15
32M Synchronous Burst CellularRAM
Functional Description
Data Sheet
42
V2.0, 2003-12-16
Note: 1.
t
WR
is valid only when ADV latch of address does not take place until the end of write.
CS high time (asynch_write, mixed)
Write recovery time
Data setup to WE high
Data hold from WE high
CRE setup to ADV high
CRE hold from ADV high
t
CPH
t
WR
t
DS
t
DH
t
CRS
t
CRH
10
0
20
0
10
5
15
0
20
0
10
5
ns
ns
ns
ns
ns
ns
1
Table 16
Parameter
Timing Parameters - Asynchronous Write With ADV Control
(cont’d)
Symbol
9.6, 12.5
Min.
15
Unit
Notes
Max.
Min.
Max.
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相關代理商/技術參數(shù)
參數(shù)描述
HYE18P32160ACL15 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM
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