參數(shù)資料
型號(hào): HYE18P32161AC-85
廠商: INFINEON TECHNOLOGIES AG
英文描述: 32M Asynchronous/Page CellularRAM
中文描述: 32M的異步/頁(yè)的CellularRAM
文件頁(yè)數(shù): 28/33頁(yè)
文件大?。?/td> 641K
代理商: HYE18P32161AC-85
HYE18P32161AC(-/L)70/85
32M Asynch/Page CellularRAM
Electrical Characteristics
Data Sheet
28
V2.0, 2003-12-16
3.3
Output Test Conditions
Figure 17
Output Test Circuit
Please refer to section
Section 2.7
.
3.4
Pin Capacitances
Table 12
Parameter
Operating Characteristics
Symbol
70
85
Unit
Test
Condition
Notes
Min.
Max.
Min.
Max.
Operating Current
Async read/write random @
t
RCmin
Async read/write random @
t
RC
= 1
μ
s
Async Page read
Stand-By Current : L-part (32M)
Stand-By Current : Std. part (32M)
I
DD1
I
DD1L
I
DD1P
I
DD2
20
5
15
90
120
17
5
12
90
120
mA
V
in
=
V
DD
or
V
SS
, Chip
enabled,
I
out
= 0
V
in
=
V
DD
or
V
SS
, Chip
deselected,
(Full array)
V
in
=
V
DD
or
V
SS
1)
μ
A
μ
A
Deep Power Down Current (32M)
I
DD3
25
25
μ
A
1) The specification assumes the output disabled.
Table 13
Pin
Pin Capacitances
Limit Values
Unit
Condition
Min.
Max.
5.0
A20 - A0, CS1, OE, WE, UB, LB, ZZ
pF
T
A
= +25 °C
freq. = 1 MHz
V
pin
= 0 V
(sampled, not 100%
tested)
DQ15 - DQ0
6.0
pF
30pF
Test point
VDDQ
DUT
5.4kOhm
5.4kOhm
VSSQ
VSSQ
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