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參數(shù)資料
| 型號(hào)： | HYM328000GD- |
| 廠商： | SIEMENS AG |
| 英文描述： | 8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
| 中文描述： | 8米× 32位動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊小外形內(nèi)存模塊 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | HYM328000GD- |
Semiconductor Group
191
HYM328000GD-50/-60
8M x 32 SO-DIMM
Absolute Maximum Ratings
1
)
Operating temperature range..............................................................................................0 to 70 C
Storage temperature range.........................................................................................– 55 to 150 C
Soldering temperature.............................................................................................................260 C
Soldering time..............................................................................................................................10 s
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
DC Characteristics
T
A
= 0 to 70 C,
V
SS
= 0 V,
V
CC
= 3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit Note
min.
max.
Input high voltage
V
IH
V
IL
V
OH
2.0
Vcc+0.3
V
2)
Input low voltage
– 0.3
0.8
V
2)
Output high voltage (LVTTL)
Output H“ level voltage (Iout = -2mA)
2.4
–
V
Output low voltage (LVTTL)
Output L“l(fā)evel voltage (Iout = +2mA)
V
OL
–
0.4
V
Output high voltage (LVCMOS)
Output H“ level voltage (Iout = -100uA)
V
OH
Vcc-0.2 -
V
6)
Ouput low voltage (LVCMOS)
Output L“ level voltage (Iout = +100uA)
V
OL
-
0.2
V
6)
Input leakage current,any input
(0 V <
V
in < Vcc , all other pins = 0 V
Output leakage current
(DO is disabled, 0 V <
Vout
< Vcc )
Average
Vcc
supply current:
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
Standby Vcc supply current
(RAS=CAS=
V
ih)
Average
V
cc supply current, during RAS-only
refresh cycles:
I
I(L)
– 10
10
μ
A
I
O(L)
– 10
10
μ
A
I
CC1
–
–
560
480
mA
mA
3) 4) 5)
I
CC2
–
8
mA
–
-50 ns version
-60 ns version
(RAS cycling: CAS =
V
IH: tRC = tRC min.)
I
CC3
–
–
560
480
mA
mA
3) 5)
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| HYM328000GD-50 | 8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
| HYM328000GD-60 | 8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM328000GD-50 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
| HYM328000GD-60 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
| HYM328020GD- | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
| HYM328020GD-50 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
| HYM328020GD-60 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
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