參數(shù)資料
型號(hào)： HYM361120GS-60
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
中文描述： 1M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
封裝： SIMM-72
文件頁(yè)數(shù)： 5/9頁(yè)
文件大?。?/td> 136K
代理商： HYM361120GS-60
Semiconductor Group
595
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 C
Storage temperature range......................................................................................– 55 to + 125 C
Soldering temperature ............................................................................................................ 260 C
Soldering time.............................................................................................................................10 s
Input/output voltage ........................................................................................................– 1 to + 7 V
Power supply voltage......................................................................................................– 1 to + 7 V
Power dissipation................................................................................................................... 8.68 W
Data out current (short circuit) ................................................................................................ 50 mA
Note
: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
1)
T
A
= 0 to 70 C;
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
5.5
V
–
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current:
– 1.0
0.8
V
–
2.4
–
V
–
–
0.4
V
μ
A
–
– 20
20
–
I
O(L)
– 10
10
μ
A
–
-60 version
-70 version
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current during RAS
only refresh cycles:
I
CC1
–
–
1240
1120
mA
mA
2), 3)
I
CC2
–
24
mA
–
-60 version
-70 version
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
I
CC3
–
–
1240
1120
mA
mA
2)
HYM 361120/40S/GS-60/-70
1M
×
36-Bit
相關(guān)PDF資料
PDF描述
HYM361120GS-70 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
HYM361140S-70 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
HYM361120S-60 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
HYM361120S-70 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
HYM362140GS-60 2M x 36-Bit Dynamic RAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYM361120GS-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
HYM361120GS-80 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Page Mode DRAM Module
HYM361120S-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
HYM361120S-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
HYM361120S-80 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Page Mode DRAM Module
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