參數(shù)資料
型號(hào): HYM368035S-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 8M x 36-Bit EDO-DRAM Module
中文描述: 8M X 36 EDO DRAM MODULE, 60 ns, SMA72
封裝: SIMM-72
文件頁(yè)數(shù): 1/10頁(yè)
文件大?。?/td> 557K
代理商: HYM368035S-60
Semiconductor Group
1
8M
×
36-Bit EDO-DRAM Module
HYM 368035S/GS-60
Advanced Information
8 388 608 words by 36-Bit organization in 2 banks
Fast access and cycle time
60 ns RAS access time
15 ns CAS access time
104 ns cycle time
Hyper page mode (EDO) capability
25 ns cycle time
Single + 5 V (
±
10 %) supply
Low power dissipation
max. 7260 mW active
CMOS – 132 mW standby
TTL
– 264 mW standby
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
24 decoupling capacitors mounted on substrate
All inputs, outputs and clocks fully TTL compatible
72 pin Single in-Line Memory Module (L-SIM-72-17) with 31.75 mm (1250 mil) height
Utilizes 24 4M x 3 DRAM’s in 300 mil SOJ packages
2048 refresh cycles / 32 ms
Optimized for use in byte-write parity applications
Tin-Lead contact pads (HYM 368035S-60)
Gold contact pads (HYM 368035GS-60)
4.96
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