- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370796 > HYM641010GS-60- (SIEMENS AG) 1M x 64-Bit Dynamic RAM Module PDF資料下載
參數(shù)資料
| 型號(hào)： | HYM641010GS-60- |
| 廠商： | SIEMENS AG |
| 英文描述： | 1M x 64-Bit Dynamic RAM Module |
| 中文描述： | 100萬× 64位動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 82K |
| 代理商： | HYM641010GS-60- |
Semiconductor Group
5
HYM 641010/20GS-60/-70
1M x 64 Module
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 °C
Storage temperature range......................................................................................– 55 to + 125 °C
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................ 12,32 W
Data out current (short circuit) ................................................................................................ 50 mA
Note
: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
1)
T
A
= 0 to 70 °C;
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
5.5
V
–
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current:
– 1.0
0.8
V
–
2.4
–
V
–
–
0.4
V
μ
A
–
– 10
10
–
I
O(L)
– 10
10
μ
A
–
HYM 641010/20GS-60
HYM 641010/20GS-70
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current during RAS
only refresh cycles:
HYM 641010/20GS-60
HYM 641010/20GS-70
I
CC1
–
–
1760
1600
mA
mA
2), 3)
I
CC2
–
50
mA
–
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
I
CC3
–
–
1760
1600
mA
mA
2)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM641010GS-70 | 1M x 64-Bit Dynamic RAM Module |
| HYM641020GS-60 | 1M x 64-Bit Dynamic RAM Module |
| HYM641020GS-70 | 1M x 64-Bit Dynamic RAM Module |
| HYM64V2005GU-50 | 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module |
| HYM64V2005GU-60 | 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM641010GS-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 64-Bit Dynamic RAM Module |
| HYM641020GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 64-Bit Dynamic RAM Module |
| HYM641020GS-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 64-Bit Dynamic RAM Module |
| HYM642005GS-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module |
| HYM642005GS-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。