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參數(shù)資料
| 型號(hào)： | HYM641010GS-70 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 1M x 64-Bit Dynamic RAM Module |
| 中文描述： | 1M X 64 FAST PAGE DRAM MODULE, 70 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 82K |
| 代理商： | HYM641010GS-70 |
Semiconductor Group
2
HYM 641010/20GS-60/-70
1M x 64 Module
The HYM 641010/20GS-60/-70 is a 8 MByte DRAM module organized as 1 048 576 words by 64-
bit in a 168-pin, dual read-out, single-in-line package comprising sixteen HYB 514400BJ/BT 1M
×
4 DRAMs in 300 mil wide SOJ or TSOPII - packages mounted together with sixteen 0.2
μ
F
ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using
four BiCMOS 8-bit buffers/line drivers.
Each HYB 514400BJ/BT is described in the data sheet and is fully electrically tested and processed
according to Siemens standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The density and speed of the module can be detected by the use of presence detect pins.
Ordering Information
Pin Names
Presence-Detect and ID-pin Truth Table:
Note: 1 = high level ( driver output), 0 = low level ( driver output) for PDE active ( ground) . For PDE at a high level
all PD terminals are in tri-state.
Type
Ordering Code
Package
Descriptions
HYM 641020GS-60
Q67100 - Q2003
L-DIM-168-1
60 ns DRAM module
HYM 641020GS-70
on request
L-DIM-168-1
70 ns DRAM module
HYM 641010GS-60
Q67100 - Q2002
L-DIM-168-1
60 ns DRAM module
HYM 641010GS-70
on request
L-DIM-168-1
70 ns DRAM module
A0-A9,B0
DQ0 - DQ63
RAS0, RAS2
CAS0 - CAS7
WE0, WE2
OE0, OE2
Vcc
Vss
PD1 - PD8
PDE
ID0 , ID1
N.C.
Address Input
Data Input/Output
Row Address Strobe
Column Address Strobe
Read / Write Input
Output Enable
Power (+5 Volt)
Ground
Presence Detect Pins
Presence Detect Enable
ID indentification bit
No Connection
Module
ID0
ID1
PD1
PD2
PD3
PD4
PD5
PD6
PD7
PD8
HYM 641010/20GS-60
Vss
Vss
0
0
1
0
0
1
1
1
HYM 641010/20GS-70
Vss
Vss
0
0
1
0
0
0
1
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM641020GS-60 | 1M x 64-Bit Dynamic RAM Module |
| HYM641020GS-70 | 1M x 64-Bit Dynamic RAM Module |
| HYM64V2005GU-50 | 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module |
| HYM64V2005GU-60 | 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module |
| HYM721000GS-60 | 1M x 72-Bit Dynamic RAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM641020GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 64-Bit Dynamic RAM Module |
| HYM641020GS-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 64-Bit Dynamic RAM Module |
| HYM642005GS-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module |
| HYM642005GS-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module |
| HYM64V1005GU-5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module |
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