參數(shù)資料
型號: HYM721000GS-70
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 1M x 72-Bit Dynamic RAM Module
中文描述: 1M X 72 FAST PAGE DRAM MODULE, 70 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 5/11頁
文件大?。?/td> 83K
代理商: HYM721000GS-70
Semiconductor Group
5
HYM721000/10GS-60/-70
1M x 72 ECC- Module
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 °C
Storage temperature range......................................................................................– 55 to + 125 °C
Input/output voltage ........................................................................................................ – 1 to + 7 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................ 13,86 W
Data out current (short circuit) ................................................................................................ 50 mA
Note
: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
1)
T
A
= 0 to 70 °C;
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
5.5
V
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current:
– 1.0
0.8
V
2.4
V
0.4
V
μ
A
– 10
10
I
O(L)
– 10
10
μ
A
HYM 721000/10GS-60
HYM 721000/10GS-70
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current during RAS
only refresh cycles:
HYM 721000/10GS-60
HYM 721000/10GS-70
I
CC1
1980
1800
mA
mA
2), 3)
I
CC2
50
mA
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
I
CC3
1980
1800
mA
mA
2)
相關(guān)PDF資料
PDF描述
HYM721010GS-60 1M x 72-Bit Dynamic RAM Module
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相關(guān)代理商/技術(shù)參數(shù)
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