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參數(shù)資料
| 型號： | HYM724000GS-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 4M x 72-Bit Dynamic RAM Module |
| 中文描述： | 4M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168 |
| 封裝： | DIM-168 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 74K |
| 代理商： | HYM724000GS-50 |
Semiconductor Group
5
HYM724000/10GS-50/-60
4M x 72 ECC- Module
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 °C
Storage temperature range......................................................................................– 55 to + 125 °C
Input/output voltage ...............................................................................-0.5 to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................ 12,60 W
Data out current (short circuit) ................................................................................................ 50 mA
Note
: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70 °C;
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
5.5
V
1)
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current:
– 1.0
0.8
V
1)
2.4
–
V
1)
–
0.4
V
μ
A
1)
– 10
10
1)
I
O(L)
– 10
10
μ
A
1)
-50 version
-60 version
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current during RAS
only refresh cycles:
I
CC1
–
–
1800
1620
mA
mA
2) 3) 4)
I
CC2
–
50
mA
–
-50 version
-60 version
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
I
CC3
–
–
1800
16
mA
mA
2) 4)
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| HYM724010GS-50 | 4M x 72-Bit Dynamic RAM Module |
| HYM72V1005GU-50 | 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module |
| HYM64V1005GU-5 | 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module |
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| HYM64V1005GU-60 | 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM724000GS-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 72-Bit Dynamic RAM Module |
| HYM724000GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 72-Bit Dynamic RAM Module |
| HYM724010GS-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 72-Bit Dynamic RAM Module |
| HYM724010GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 72-Bit Dynamic RAM Module |
| HYM72V1005GU-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module |
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