參數(shù)資料
型號(hào): HYMA6V16733E14HGTG
英文描述: 16Mx72|3.3V|45|x18|FP/EDO DRAM - 128MB Buffered DIMM
中文描述: 16Mx72 | 3.3 | 45 | x18 |計(jì)劃生育/ EDO公司的DRAM - 128MB的緩沖DIMM
文件頁數(shù): 9/28頁
文件大?。?/td> 494K
代理商: HYMA6V16733E14HGTG
HYMA6V16730E14HGTG
Rev.0.1/Apr.01
9
Extended Data Out Mode Cycles
EDO Page Mode Read-Modify-Write Cycle
Present Detect Read Cycle
Parameter
Symbol
-50
-60
Unit
Note
Min
Max
Min
Max
EDO page mode cyle time
tHPC
20
-
25
-
ns
20
Write pulse width during /CAS precharge
tWPE
8
-
10
-
ns
EDO mode /RAS pulse width
tRASP
-
100K
-
100K
ns
16
Access time from /CAS precharge
tACP
-
28
-
35
ns
9,17
/RAS hold time from /CAS precharge
tRHCP
33
-
40
-
ns
/CAS hold time referred /OE
tCOL
8
-
10
-
ns
/CAS to /OE set-up time
tCOP
5
-
5
-
ns
Read command hold time
from /CAS precharge
tRCHP
28
-
35
-
ns
Output data hold time from /CAS low
tDOH
5
-
5
-
ns
9,22
/OE precharge time
tOEP
8
-
10
-
ns
Parameter
Symbol
-50
-60
Unit
Note
Min
Max
Min
Max
EDO read-modify-write cycle time
tHPRWC
57
-
68
-
ns
EDO page mode read-modify-write cycle
/CAS precharge to /WE delay time
tCPW
45
-
54
-
ns
14
Parameter
Symbol
-50
-60
Unit
Note
Min
Max
Min
Max
/PDE to valid PD bit
tPD
-
10
-
10
ns
/PDE to PD bit in active
tPDOFF
2
7
2
7
ns
相關(guān)PDF資料
PDF描述
HYMA6V16733F14HGTG 16Mx72|3.3V|45|x18|FP/EDO DRAM - 128MB Buffered DIMM
HYMA6V32730E14HGTG 32Mx72|3.3V|45|x36|FP/EDO DRAM - 256MB Buffered DIMM
HYMA6V32733E14HGTG 32Mx72|3.3V|45|x36|FP/EDO DRAM - 256MB Buffered DIMM
HYMA6V8730E18HGTG 8Mx72|3.3V|45|x9|FP/EDO DRAM - 64MB Buffered DIMM
HYMR11648-653 RAMBUS DRAM Module
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