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參數(shù)資料
| 型號： | HYR163240G-845 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
| 中文描述： | 直接的RDRAM RIMM的模塊（帶288兆RDRAMs） |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 385K |
| 代理商： | HYR163240G-845 |
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
INFINEON Technologies
12
7.01
a) Actual power will depend on individual memory controller and usage pattern. Power does not include Refresh
Current.
b) I/O power is a function of the percentage of 1
’
s, to add I/O power for 50% 1
’
s for a x 16 need to add 257mA or
290mA for x18 ECC module for the following: V
DD
= 2.5V, V
TERM
= 1.8V, V
REF
= 1.4V and V
DIL
= V
REF
= 0.5V.
RIMM Module Current Profile
I
DD
RIMM Module Capacity:
No. of 288 Mbit RDRAMs:
6
2
1
4
2
8
5
1
Unit
RIMM Modules Power
Conditions
a)
Freq.
max.
max.
max.
max.
I
DD1
One RDRAM in Read
b
,
balance in NAP mode
-800
932
940
956
988
mA
-711
863
876
887
919
mA
-600
794
812
818
850
mA
I
DD2
One RDRAM in Read
b
,
balance in Standby mode
-800
1038
1257
1697
2575
mA
-711
890
1090
1593
2433
mA
-600
-800
764
1107
974
1465
1490
2181
2290
3613
mA
mA
I
DD3
One RDRAM in Read
b
,
balance in Active mode
-711
827
1361
2031
3372
mA
-600
946
1258
1882
3130
mA
I
DD4
One RDRAM in Write,
balance in Active mode
-800
932
940
956
988
mA
-711
863
876
887
919
mA
-600
794
812
818
850
mA
I
DD5
One RDRAM in Write,
balance in Standby mode
-800
1038
1257
1697
2575
mA
-711
890
1090
1593
2433
mA
-600
764
974
1490
2290
mA
I
DD6
One RDRAM in Write,
balance in Active mode
-800
1107
1465
2181
3613
mA
-711
827
1361
2031
3372
mA
-600
946
1258
1882
3130
mA
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相關(guān)代理商/技術(shù)參數(shù) |
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