- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224000 > HYR164830G-653 (INFINEON TECHNOLOGIES AG) 48M X 16 RAMBUS MODULE, DMA84 PDF資料下載
參數(shù)資料
| 型號(hào)： | HYR164830G-653 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | DRAM |
| 英文描述： | 48M X 16 RAMBUS MODULE, DMA84 |
| 封裝： | RIMM-184 |
| 文件頁數(shù)： | 14/14頁 |
| 文件大?。?/td> | 434K |
| 代理商： | HYR164830G-653 |
Last Modified on 7/13/99
Page 9
Rambus RIMM Modules
HYR16xx30G/HYR18xx20G
Absolute Maximum Ratings
DC Recommended Electrical Conditions
Symbol
Parameter
Min
Max
Unit
VI,ABS
Voltage applied to any RSL or CMOS signal pad with respect to
Gnd
- 0.3
VDD + 0.3
V
VDD,ABS
Voltage on VDD with respect to Gnd
- 0.5
VDD + 1.0
V
TSTORE
Storage temperature
- 50
100
°C
Symbol
Parameter and Conditions
Min
Max
Unit
VDD
Supply voltage
2.50 - 0.13
2.50 + 0.13
V
VCMOS
CMOS I/O power supply at pad for 2.5V controllers:
CMOS I/O power supply at pad for 1.8V controllers:
2.5 - 0.13
1.8 - 0.1
2.5 + 0.25
1.8 + 0.2
V
VREF
Reference voltage
1.4 - 0.2
1.4 + 0.2
V
VIL
RSL input low voltage
VREF - 0.5
VREF - 0.2
V
VIH
RSL input high voltage
VREF + 0.2
VREF + 0.5
V
VIL,CMOS
CMOS input low voltage
- 0.3
0.5VCMOS - 0.25
V
VIH,CMOS
CMOS input high voltage
0.5VCMOS + 0.25
VCMOS + 0.7
V
VOL,CMOS
CMOS output low voltage @ IOL,CMOS = 1mA
0.3
V
VOH,CMOS
CMOS output high voltage @ IOH,CMOS = -0.25mA
VCMOS - 0.3
V
IREF
VREF current @ VREF,MAX
-10 x no. RDRAMsa
10 x no. RDRAMsa
a. The table below shows the number of 128Mb or 144Mb RDRAM devices contained in a RIMM module of listed storage capacity.
A
ISCK,CMD
CMOS input leakage current @ (0
≤ V
CMOS ≤ VDD)
-10 x no. RDRAMsa
10 x no. RDRAMsa
A
ISIN,SOUT
CMOS input leakage current @ (0
≤ V
CMOS ≤ VDD)
-10.0
10.0
A
RIMM Module Capacity:
64/72MB
96/108MB
128/144MB
256/288MB
Number of 128Mb or 144Mb RDRAM devices:
4
6
8
16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYS64T16000HDL-2.5-A | 16M X 64 DDR DRAM MODULE, 0.4 ns, DMA200 |
| HYS72D64020GR-7-X | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| HYS72D64020GR-7.5-X | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| HYS72T128000EU-2.5-C2 | 128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 |
| HYS72T64000EP-3.7-B2 | 64M X 72 DDR DRAM MODULE, DMA240 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYR166420G-653 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
| HYR166420G-745 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
| HYR166420G-840 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
| HYR166420G-845 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
| HYR166430G-653 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RAMBUS DRAM Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。