- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370801 > HYR166420G-653 (INFINEON TECHNOLOGIES AG) PCB Header; No. of Contacts:72; Pitch Spacing:0.1"; No. of Rows:2; Series:929; Body Material:Glass-Filled Polyester; Contact Material:Copper Alloy; Contact Plating:Tin-Lead Over Nickel; Leaded Process Compatible:Yes RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號(hào)： | HYR166420G-653 |
| 廠(chǎng)商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | PCB Header; No. of Contacts:72; Pitch Spacing:0.1"; No. of Rows:2; Series:929; Body Material:Glass-Filled Polyester; Contact Material:Copper Alloy; Contact Plating:Tin-Lead Over Nickel; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 中文描述： | 直接的RDRAM RIMM的模塊（帶144兆R(shí)DRAMs） |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大?。?/td> | 319K |
| 代理商： | HYR166420G-653 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)當(dāng)前第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
HYR 16xx20G/HYR 18xx20G
Rambus RIMM Modules
INFINEON Technologies
9
7.00
1)
The table below shows the number of RDRAM devices contained in a RIMM module of listed
memory storage capacity
.
Absolute Maximum Ratings
Symbol Parameter
Limit Values
Unit
min.
max.
V
DD
+ 0.3
V
I,ABS
Voltage applied to any RSL or CMOS signal pad with
respect to GND
Voltage on
V
DD
with respect to GND
Storage temperature
–
0.3
V
V
DD,ABS
T
STORE
–
0.5
V
DD
+ 1.0
100
V
°
C
–
50
DC Recommended Electrical Conditions
Symbol
Parameter and Conditions
Limit Values
Unit
min.
max.
V
DD
V
CMOS
Supply voltage
2.50
–
0.13
2.50 + 0.13
V
CMOS I/O power supply at pad for
2.5 V controllers:
CMOS I/O power supply at pad for
1.8 V controllers:
2.5
–
0.13
1.8
–
0.1
2.5 + 0.25
1.8 + 0.2
V
V
V
REF
V
IL
V
IH
V
IL,CMOS
V
IH,CMOS
V
OL,CMOS
Reference voltage
1.4
–
0.2
V
REF
–
0.5
V
REF
+ 0.2
–
0.3
0.5
V
CMOS
+ 0.25
V
CMOS
+ 0.7
–
1.4 + 0.2
V
REF
–
0.2
V
REF
+ 0.5
0.5
V
CMOS
–
0.25
V
RSL input low voltage
V
RSL input high voltage
V
CMOS input low voltage
V
CMOS input high voltage
V
CMOS output low voltage @
I
OL,CMOS
= 1 mA
CMOS output high voltage @
I
OH,CMOS
=
–
0.25 mA
V
REF
current @
V
REF,MAX
0.3
V
V
OH,CMOS
V
CMOS
–
0.3
–
V
I
REF
–
10
×
no.
RDRAMs
1)
–
10
×
no.
RDRAMs
1)
10
×
no.
RDRAMs
1)
10
×
no.
RDRAMs
1)
μ
A
I
SCK,CMD
CMOS input leakage current @
(0
≤
V
CMOS
≤
V
DD
)
CMOS input leakage current @
(0
≤
V
CMOS
≤
V
DD
)
μ
A
I
SIN,SOUT
–
10.0
10.0
μ
A
RIMM Module Capacity
64/72 MB
128/144 MB
256/288 MB
Number of 144 Mbit RDRAM devices
4
8
16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYR166420G-745 | Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
| HYR166420G-840 | Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
| HYR166420G-845 | CONN HEADER .100 DUAL R/A 72POS |
| HYR1812820G-653 | PCB Header; No. of Contacts:72; Pitch Spacing:0.1"; No. of Rows:2; Series:929; Body Material:Glass-Filled Polyester; Contact Material:Copper Alloy; Contact Plating:Tin-Lead Over Nickel; Mounting Type:PCB Right Angle Thru Hole RoHS Compliant: Yes |
| HYR1812820G-745 | Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYR166420G-745 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
| HYR166420G-840 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
| HYR166420G-845 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
| HYR166430G-653 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:RAMBUS DRAM Module |
| HYR166430G-745 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:RAMBUS DRAM Module |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。