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參數(shù)資料
| 型號： | HYR166440G-845 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
| 中文描述： | 直接的RDRAM RIMM的模塊（帶288兆RDRAMs） |
| 文件頁數(shù)： | 9/14頁 |
| 文件大小： | 385K |
| 代理商： | HYR166440G-845 |
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
INFINEON Technologies
9
7.01
1)
The table below shows the number of 288 Mbit RDRAM devices contained in a RIMM module of
listed memory storage capacity
.
Absolute Maximum Ratings
Symbol Parameter
Limit Values
Unit
min.
max.
V
DD
+ 0.3
V
I,ABS
Voltage applied to any RSL or CMOS signal pad with
respect to GND
Voltage on
V
DD
with respect to GND
Storage temperature
–
0.3
V
V
DD,ABS
T
STORE
–
0.5
V
DD
+ 1.0
100
V
°
C
–
50
DC Recommended Electrical Conditions
Symbol
Parameter and Conditions
Limit Values
Unit
min.
max.
V
DD
V
CMOS
Supply voltage
2.50
–
0.13
2.50 + 0.13
V
CMOS I/O power supply at pad for
2.5 V controllers:
CMOS I/O power supply at pad for
1.8 V controllers:
2.5
–
0.13
1.8
–
0.1
2.5 + 0.25
1.8 + 0.2
V
V
V
REF
V
IL
V
IH
V
IL,CMOS
V
IH,CMOS
V
OL,CMOS
Reference voltage
1.4
–
0.2
V
REF
–
0.5
V
REF
+ 0.2
–
0.3
0.5
V
CMOS
+ 0.25
V
CMOS
+ 0.7
–
1.4 + 0.2
V
REF
–
0.2
V
REF
+ 0.5
0.5
V
CMOS
–
0.25
V
RSL input low voltage
V
RSL input high voltage
V
CMOS input low voltage
V
CMOS input high voltage
V
CMOS output low voltage @
I
OL,CMOS
= 1 mA
CMOS output high voltage @
I
OH,CMOS
=
–
0.25 mA
V
REF
current @
V
REF,MAX
0.3
V
V
OH,CMOS
V
CMOS
–
0.3
–
V
I
REF
–
10
×
no.
RDRAMs
1)
–
10
×
no.
RDRAMs
1)
10
×
no.
RDRAMs
1)
10
×
no.
RDRAMs
1)
μ
A
I
SCK,CMD
CMOS input leakage current @
(0
≤
V
CMOS
≤
V
DD
)
CMOS input leakage current @
(0
≤
V
CMOS
≤
V
DD
)
μ
A
I
SIN,SOUT
–
10.0
10.0
μ
A
RIMM Module Capacity
64/72 MB
128/
144 MB
256/
288 MB
512/
576 MB
Number of 288 Mbit RDRAM devices
2
4
8
16
相關(guān)PDF資料 |
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| HYR186440G-845 | Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
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| HYR1812820G-745 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
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