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參數(shù)資料
| 型號： | HYR166449G-845 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 熱敏電阻 |
| 英文描述： | SENSOR, MINIATURE, NTC, 10K; Series:B578; Thermistor type:NTC; Resistance:10kR; Beta value:3988; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. max:155(degree C); Case RoHS Compliant: Yes |
| 中文描述： | 直接的RDRAM RIMM的模塊（帶288兆RDRAMs） |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 295K |
| 代理商： | HYR166449G-845 |
HYR16xx49G
64MB & 128MB Rambus RIMM Modules
INFINEON Technologies
7
9.01
RDQB8
…
RDQB0
B61, A61, B63, A63, B65,
A65, B67, A67, B69
I/O
RSL
Data bus B. A 9-bit bus carrying a
byte of read or write data between
the Channel and the RDRAM.
RDQB8 is non-functional on
modules with x16 RDRAM devices.
RROW2
…
RROW0
B77, A75, B75
I
RSL
Row bus. 3-bit bus containing
control and address information for
row accesses.
RSCK
A59
I
V
CMOS
Serial Clock input. Clock source
used to read from and write to the
RDRAM control registers.
SA0
B53
I
SVDD
Serial Presence Detect Address 0.
SA1
B55
I
SVDD
Serial Presence Detect Address 1.
SA2
B57
I
SVDD
Serial Presence Detect Address 2.
SCL
A53
I
SVDD
Serial Presence Detect Clock.
SDA
A55
I/O
SVDD
Serial Presence Detect Data (Open
Collector I/O).
SIN
B36
I/O
V
CMOS
Serial I/O for reading from and
writing to the control registers.
Attaches to SIO0 of the first RDRAM
on the module.
SOUT
A36
I/O
V
CMOS
Serial I/O for reading from and
writing to the control registers.
Attaches to SIO1 of the last RDRAM
on the module.
SVDD
A56, B56
–
–
SPD Voltage. Used for signals SCL,
SDA, SWE, SA0, SA1 and SA2.
SWP
A57
I
SVDD
Serial Presence Detect Write
Protect (active high). When low, the
SPD can be written as well as read.
V
CMOS
A35, B35, A37, B37
–
–
CMOS I/O Voltage. Used for signals
CMD, SCK, SIN, SOUT.
V
DD
A41, A42, A54, A58, B41,
B42, B54, B58
–
–
Supply voltage for the RDRAM core
and interface logic.
V
REF
A51, B51
–
–
Logic threshold reference voltage
for RSL signals.
Module Connector Pad Description
(cont
’
d)
Signal
Module Connector Pads
I/O
Type
Description
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