參數(shù)資料
型號(hào): HYR183220G-653
廠商: INFINEON TECHNOLOGIES AG
英文描述: Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs)
中文描述: 直接的RDRAM RIMM的模塊(帶144兆R(shí)DRAMs)
文件頁(yè)數(shù): 12/14頁(yè)
文件大?。?/td> 319K
代理商: HYR183220G-653
HYR 16xx20G/HYR 18xx20G
Rambus RIMM Modules
INFINEON Technologies
12
7.00
a) Actual power will depend on individual memory controller and usage pattern. Power does not include Refresh
Current.
b) I/O power is a function of % 1
s to add I/O power for 50% 1
s for a x 16 need to add 257mA or 290mA for x18
ECC module for the following: V
DD
= 2.5V, V
TERM
= 1.8V, V
REF
= 1.4V and V
DIL
= V
REF
= 0.5V.
RIMM Module Current Profile
I
DD
RIMM Module Capacity:
No. of 144 Mbit RDRAMs:
6
4
1
8
2
1
Unit
RIMM Modules Power
Conditions
a)
Freq.
max.
max.
max.
I
DD1
One RDRAM in Read
b
,
balance in NAP mode
-800
585
600
635
mA
-711
530
545
580
mA
-600
460
475
510
mA
I
DD2
One RDRAM in Read
b
,
balance in Standby mode
-800
875
1275
2075
mA
-711
805
1185
1945
mA
-600
-800
720
1025
1080
1625
1800
2825
mA
mA
I
DD3
One RDRAM in Read
b
,
balance in Active mode
-711
955
1535
2695
mA
-600
870
1430
2550
mA
I
DD4
One RDRAM in Write,
balance in Active mode
-800
645
660
695
mA
-711
580
595
630
mA
-600
505
520
555
mA
I
DD5
One RDRAM in Write,
balance in Standby mode
-800
935
1335
2135
mA
-711
855
1235
1995
mA
-600
765
1125
1845
mA
I
DD6
One RDRAM in Write,
balance in Active mode
-800
1085
1685
2885
mA
-711
1005
1585
2745
mA
-600
915
1475
2595
mA
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