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參數(shù)資料
| 型號(hào)： | HYS 72D64020GU |
| 廠商： | SIEMENS AG |
| 英文描述： | 2.5 V 186-pin Unbuffered DDR-I SDRAM Modules(2.5 V 184腳、寄存型512M位 DDR-I SDRAM 模塊) |
| 中文描述： | 2.5伏186針緩沖的DDR - 1 SDRAM的模塊（2.5伏，寄存型512M位的DDR 184腳，我內(nèi)存模塊） |
| 文件頁(yè)數(shù)： | 13/15頁(yè) |
| 文件大?。?/td> | 164K |
| 代理商： | HYS 72D64020GU |
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HYS64/72D32000GU / HYS64/72D64020GU
Unbuffered DDR-I SDRAM-Modules
Preliminary Datasheet
13
5.00
Auto Precharge Write Recovery +
Precharge Time
t
DAL
35
–
35
–
35
–
ns
–
Internal Write to Read Command
Delay
t
WTR
1
–
1
–
1
–
*
t
CK
–
Power Down Entry Time
t
PDENT
t
IS + 1 CLK
2 CLK +
t
IS
–
–
t
IS + 1 CLK
2 CLK +
t
IS
ns
–
Power Down Exit Time
t
PDEX
t
IS + 1 CLK
2 CLK +
t
IS
–
–
t
IS + 1 CLK
2 CLK +
t
IS
ns
–
Self Refresh Exit Time
t
SREX
t
REF
t
200
–
200
–
200
–
Cycles –
Average Periodic Refresh Intercal
–
7.8
–
7.8
–
7.8
μ
s
–
CLK Transition Time
1)
Minimum Auto Refresh cycle time is greater than minimum cycle time during normal Read or Write operation.
2)
t
HP
is the lesser of t
CL
and T
CH
3)
These parameters guarantee device timing, but they are not necessarily tested on each device
they may be guaranteed by design or tester correlation
t
IS
/ t
IH
=0.9ns for PC266 are measured with command / address input slew rate of > 1.0V/ns
for command / address input slew rate of > 0.5V/ns and < 1.0V/ns t
/ t
= 1.0ns should be guaranteed by design
for PC200 t
/ t
= 1.2ns command / address input slew rate of 1.0V/ns is assumed
slew rate is measured between V
(AC) and V
OL
(AC)
CK / CK slew rates are assumed to be > 1.0V/ns
Pulse width for command / address signals to be properly sampled at rising edges of clock shall be a minimum of 2.2ns
0.5
–
–
–
0.5
–
ns
–
Environmental Parameters
Symbol
Parameter
Rating
Units
Notes
T
OPR
Operating Temperature (ambient)
0 to +55
o
C
H
OPR
Operating Humidity (relative)
10 to 90
%
T
STG
Storage Temperature
-50 to +100
o
C
1)
H
STG
Storage Humidity (without condensation)
5 to 95
%
1)
Barometric Pressure (operating and storage)
105 to 69
K Pascal
2)
1)
stresses greater than those listed may cause permanent damage to the device. Device functional operation at or above these conditions is not implied.
2)
up to 3000 m (9850 ft)
AC Characteristics
(cont’d)
(for reference only)
(values apply to the SDRAM component and do not include register, PLL, or card wiring)
(
T
A
= 0 to + 70
°
C,
V
DD
= 2.5 V ± 0.2 V)
Parameter
Symbol
-7
PC266A
-7.5
PC266B
-8
PC200
Unit
Notes
min.
max.
min.
max.
min.
max.
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| HYS 72V16300GU | 3.3 V 16M × 72-Bit 1 Bank SDRAM Module(3.3 V 16M × 72-位 1列 同步動(dòng)態(tài)RAM模塊) |
| HYS 64V32220GU | 3.3 V 32M × 64-Bit 1 Bank SDRAM Module(3.3 V 32M × 64-位 1列 同步動(dòng)態(tài)RAM模塊) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYS72D64020GU-7-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?512MB (64Mx72) PC2100 2-bank? |
| HYS72D64020GU-7-B | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:184-Pin Unbuffered Dual-In-Line Memory Modules |
| HYS72D64020GU-7F-B | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:184-Pin Unbuffered Dual-In-Line Memory Modules |
| HYS72D64020GU-8-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?512MB (64Mx72) PC1600 2-bank? |
| HYS72D64020GU-8-B | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:184-Pin Unbuffered Dual-In-Line Memory Modules |
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