參數(shù)資料
型號: HYS 72V16301GR-7.5
廠商: SIEMENS AG
英文描述: 3.3V 128MB SDRAM Module(3.3V 128M位 SDRAM 模塊)
中文描述: 3.3 128MB的內(nèi)存模塊(3.3V的128兆位內(nèi)存模塊)
文件頁數(shù): 1/19頁
文件大小: 228K
代理商: HYS 72V16301GR-7.5
Data Book
1
1.00
HYS 72Vxx3xxGR-7.5
PC133 Registered SDRAM-Modules
3.3 V 168-pin Registered SDRAM Modules
PC133 128 MByte Module
PC133 256 MByte module
PC133 512 MByte Module
PC133 1 GByte Module
168-pin Registered 8 Byte Dual-In-Line
SDRAM Module for PC and Server main
memory applications
The HYS 72Vxx3xxGR-7.5 are industry standard 168-pin 8-byte Dual in-line Memory Modules
(DIMMs) organized as 16M
×
72, 32M x 72, 64M
×
72 and 128M
×
72 high speed memory arrays
designed with Synchronous DRAMs (SDRAMs) for ECC applications. The 32M x 72 (256Mbyte)
registered DIMM module is available in two versions (12 or 13 row addresses). All control and
address signals are registered on-DIMM and the design incorporates a PLL circuit for the Clock
inputs. Use of an on-board register reduces capacitive loading on the input signals but are delayed
by one cycle in arriving at the SDRAM devices. Decoupling capacitors are mounted on the PC
board. The DIMMs use a serial presence detects scheme implemented via a serial E
2
PROM using
the 2-pin I
2
C protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second
128 bytes are available to the end user. All Infineon 168-pin DIMMs provide a high performance,
flexible 8-byte interface in a 133.35 mm long footprint.
One bank 16M
×
72, 32M x 72 and 64M
×
72
two bank 128M
×
72 organization
Optimized for ECC applications with very low
input capacitances
JEDEC standard Synchronous DRAMs
(SDRAM) Programmable CAS Latency, Burst
Length and Wrap Sequence (Sequential &
Interleave)
Single + 3.3 V (
±
0.3 V) power supply
Programmable CAS Latency, Burst Length,
and Wrap Sequence (Sequential &
Interleave)
Auto Refresh (CBR) and Self Refresh
All inputs and outputs are LVTTL compatible
Serial Presence Detect with E
2
PROM
Utilizes SDRAMs in TSOPII-54 packages
with registers and PLL.
Card Size: 133.35 mm
×
43.18 mm
×
3.99/
8.13 mm with Gold contact pads
These modules all fully compatible with the
current PC133 and INTELs PC100
specifications
Performance:
-7.5
Unit
f
CK
t
CK
t
AC
Clock Frequency (max.) @ CL = 3
133
MHz
Clock Cycle Time (min.) @ CL = 3
7.5
ns
Clock Access Time (min.)
CAS Latency = 3
5.4
ns
相關(guān)PDF資料
PDF描述
HYS 72V32301GR-7.5 3.3V 256MB SDRAM Module(3.3V 256M位 SDRAM 模塊)
HYS 72V16300GR-7.5 3.3V 128MB SDRAM Module(3.3V 128M位 SDRAM 模塊)
HYS 72V32300GR-7.5 3.3V 256MB SDRAM Module(3.3V 256M位 SDRAM 模塊)
HYS 72V64300GR-7.5 3.3V 256MB SDRAM Module(3.3V 256M位 SDRAM 模塊)
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