參數(shù)資料
型號: HYS64D64020GBDL-6-B
廠商: INFINEON TECHNOLOGIES AG
英文描述: 200-Pin Small Outline Dual-In-Line Memory Modules
中文描述: 200引腳小外型雙列直插內(nèi)存模塊
文件頁數(shù): 17/27頁
文件大小: 780K
代理商: HYS64D64020GBDL-6-B
Data Sheet
17
Rev. 1.0, 2004-05
HYS64D64020[H/G]DL–[5/6]–B
Small Outline DDR SDRAM Modules
Electrical Characteristics
Table 9
Product Type
I
DD
Specification for HYS64D64020[H/G]DL–[5/6]–B
H
Organization
512MB
×
64
2 Ranks
–5
Symbol
Typ.
I
DD0
570
I
DD1
630
I
DD2P
20
I
DD2N
240
I
DD2Q
150
I
DD3P
100
I
DD3N
340
I
DD4R
650
I
DD4W
670
I
DD5
1130
I
DD6
13.6
I
DD7
1410
H
H
512MB
×
64
2 Ranks
–6
Typ.
510
570
20
200
140
90
300
570
590
1010
13.6
1250
H
Unit
Note
1)2)
1) Module
I
DD
values are calculated on the basis of component
I
DD
and can be measured differently according to DQ loading
capacity.
2) Test condition for maximum values:
V
DD
= 2.7 V,
T
A
= 10 °C
3) The module
I
DDx
values are calculated from the
I
DDx
values of the component data sheet as follows:
m
×
I
DDx
[component] +
n
×
I
DD3N
[component] with
m
and
n
number of components of rank 1 and 2;
n
=0 for 1 rank
modules
4) DQ I/O (
I
DDQ
) currents are not included in the calculations (see note 1)
5) The module
I
DDx
values are calculated from the corrponent
I
DDx
data sheet values as: (
m
+
n
)
×
I
DDx
[component]
Max.
680
760
40
288
208
128
400
780
800
1360
13.6
1660
Max.
620
680
30
240
192
120
352
676
696
1196
13.6
1480
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
3)
3)4)
5)
5)
5)
5)
5)
3)4)
3)
3)
5)
3)4)
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