參數(shù)資料
型號: HYS64V1000GU-70
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module
中文描述: 1M X 64 SYNCHRONOUS DRAM, DMA168
封裝: DIMM-168
文件頁數(shù): 1/9頁
文件大?。?/td> 68K
代理商: HYS64V1000GU-70
Semiconductor Group
1
3.3V 1M x 64-Bit SDRAM Module
3.3V 1M x 72-Bit SDRAM Module
168 pin unbuffered DIMM Modules
HYS64V1000GS-10/-12/-15
HYS72V1000GS-10/-12/-15
Target Information
168 Pin JEDEC Standard, Unbuffered 8 Byte
Dual-In-Line SDRAM Module
1 bank 1M x 64, 1M x 72 organisation
Optimized for byte-write non-parity or ECC applications
JEDEC standard Synchronous DRAMs (SDRAM)
Performance:
Single +3.3V(
±
0.3V ) power supply
Programmable CAS Latency, Burst Length and Wrap Sequence
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs, outputs are LVTTL compatible
Serial presence detects
Utilizes four / five 1M x 16 SDRAMs in TSOPII-50 packages
4096 refresh cycles every 64 ms
Gold contact pad
Card Size: 133,35mm x 25,40mm x 3,00 mm
This SDRAM product familiy is intended to be fully pin and architecture compatible with the 168
pin Unbuffered DRAM DIMM module family.
-10
-12
-15
Units
f
CK
Clock frequency
100
83
66
MHz
t
CK3
Clock cycle time
10
12
15
ns
t
AC3
Clock access time
CAS latency = 3
9
11
13
ns
4.96
相關(guān)PDF資料
PDF描述
HYS72V1000GU-50 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module
HYS72V1000GU-70 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module
HYS64V1000GS-10 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module
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