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參數(shù)資料
| 型號： | HYS64V16220GU-10 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
| 中文描述： | 16M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 248K |
| 代理商： | HYS64V16220GU-10 |
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
INFINEON Technologies
11
9.01
Serial Presence Detects
A serial presence detect storage device - E
2
PROM - is assembled onto the module. Information
about the module configuration, speed, etc. is written into the E
2
PROM device during module
production using a serial presence detect protocol ( I
2
C synchronous 2-wire bus)
SPD-Table:
Byte#
Description
SPD Entry Value
HEX
8M x 64
-7.5
16M x 64
-7.5
-7
-8
-7
-8
0
1
2
3
4
5
6
7
8
9
10
11
12
Number of SPD bytes
Total bytes in Serial PD
Memory Type
Number of Row Addresses
Number of Column Addresses
Number of DIMM Banks
Module Data Width
Module Data Width (cont
’
d)
Module Interface Levels
SDRAM Cycle Time at CL=3
SDRAM Access time from Clock at CL=3
Dimm Config (Error Det/Corr.)
Refresh Rate/Type
128
256
80
08
04
0C
09
SDRAM
12
9
1 / 2
64
0
LVTTL
7.5 / 10.0 ns
5.4 / 6.0 ns
none
Self-Refresh,
15.6
μ
s
01
02
40
00
01
75
54
75
54
A0
60
75
54
75
54
A0
60
00
80
13
14
15
SDRAM width, Primary
Error Checking SDRAM data width
Minimum clock delay for back-to-back
random column address
Burst Length supported
Number of SDRAM banks
Supported CAS Latencies
CS Latencies
WE Latencies
SDRAM DIMM module attributes
10
00
01
n/a
t
ccd
= 1 CLK
16
17
18
19
20
21
1, 2, 4 & 8
2
2, & 3
CS latency = 0
Write latency = 0
non buffered/non
reg.
Vcc tol +/- 10%
7.5 / 10.0 ns
5.4 / 6.0 ns
0F
04
06
01
01
00
22
23
24
SDRAM Device Attributes :General
SDRAM Cycle Time at CL = 2
SDRAM Access Time from Clock at
CL=2
SDRAM Cycle Time at CL = 1
SDRAM Access Time from Clock at
CL=1
Minimum Row Precharge Time
0E
75
54
A0
60
A0
60
75
54
A0
60
A0
60
25
26
not supported
not supported
00
00
FF
FF
FF
FF
00
00
FF
FF
FF
FF
27
15/ 20 ns
0F
14
14
0F
14
14
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYS64V8200GU-8 | 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
| HYS64V8200GU-8B | 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
| HYS64V16300GU-75-C2 | 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
| HYS64V32220GU-75-C2 | 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
| HYS72V16300GU-75-C2 | 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYS64V16220GU-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
| HYS64V16220GU-8B | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
| HYS64V16300GU | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
| HYS64V16300GU-7.5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYS64V16300GU-7.5-C2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
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