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參數(shù)資料
| 型號(hào)： | HYS64V16302GU-75-D |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules |
| 中文描述： | 3.3伏1,600】64位，128MByte SDRAM內(nèi)存模塊168針腳無(wú)緩沖DIMM模塊 |
| 文件頁(yè)數(shù)： | 9/13頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | HYS64V16302GU-75-D |
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HYS 64V16302GU
SDRAM-Modules
INFINEON Technologies
9
9.01
Notes
1. All AC characteristics are shown for the SDRAM components.
An initial pause of 100
μ
s is required after power-up. Then a Precharge All Banks command must
be given followed by eight Auto Refresh (CBR) cycles before the Mode Register Set Operation
can begin.
2. AC timing tests have
V
= 0.4 V and
V
= 2.4 V with the timing referenced to the 1.4 V crossover
point. The transition time is measured between
V
and
V
. All AC measurements assume
t
T
= 1 ns with the AC output load circuit shown in Figure below. Specified
t
AC
and
t
OH
parameters
are measured with a 50 pF only, without any resistive termination and with a input signal of 1V/
ns edge rate between 0.8 V and 2.0 V.
3. If clock rising time is longer than 1 ns, a time (
t
T
/2
0.5) ns must be added to this parameter.
4. Rated at 1.4 V.
5. If
t
is longer than 1 ns, a time (
t
1) ns must be added to this parameter.
6. Whenever the refresh Period has been exceeded, a minimum of two Auto (CBR) Refresh
commands must be given to
“
wake-up
”
the device.
7. Timing is a asynchronous. If setup time is not met by rising edge of the clock then the CKE signal
is assumed latched on the next cycle.
8. Self Refresh Exit is a synchronous operation and begins on the second positive clock edge after
CKE returns high. Self Refresh Exit is not complete until a time period equal to
t
RC
is satisfied
after the Self Refresh Exit command is registered.
9. This is referenced to the time at which the output achieved the open circuit condition, not to
output voltage levels.
Serial Presence Detect
A serial presence detect storage device - E
2
PROM - is assembled onto the module. Information
about the module configuration, speed, etc. is written into the E
2
PROM device during module
production using a serial presence detect protocol (I
2
C synchronous 2-wire bus).
50 pF
I/O
Measurement conditions for
t
AC
and
t
OH
CLOCK
2.4 V
0.4 V
INPUT
IS
t
t
T
OUTPUT
1.4 V
t
LZ
AC
t
t
AC
OH
t
HZ
t
1.4 V
CL
t
CH
t
IH
t
1.4 V
IO.vsd
相關(guān)PDF資料 |
PDF描述 |
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| HYS64V16302GU-7-D | 3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules |
| HYS64V16302GU-8-C2 | 3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules |
| HYS64V16302GU | 3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules |
| HYS64V16302GU-7.5-C2 | SDRAM|16MX64|CMOS|DIMM|168PIN|PLASTIC |
| HYS64V2100GCU-10 | 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYS64V16302GU-7-D | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules |
| HYS64V16302GU-8-C2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules |
| HYS64V2000GU-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYS64V2000GU-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYS64V2100G | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module |
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