參數(shù)資料
型號(hào): HYS72V16200GU-8
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
中文描述: 16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 10/17頁
文件大小: 84K
代理商: HYS72V16200GU-8
HYS 64(72)V16200/3222(0)0/64220GU
SDRAM Modules
Semiconductor Group
10
1998-08-01
Refresh Cycle
Self Refresh Exit Time
t
SREX
t
REF
10
10
ns
9
Refresh Period
64
64
ms
6
Refresh Interval
128Mbit SDRAM based modules
256Mbit SDRAM based modules
15.6
7.8
15.6
7.8
μ
s
μ
s
Read Cycle
Data Out Hold Time
Data Out to Low Impedance Time
t
LZ
Data Out to High Impedance
Time
t
OH
3
3
ns
2
0
0
ns
t
HZ
3
8
3
10
ns
8
DQM Data Out Disable Latency
t
DQZ
2
2
CLK
Write Cycle
Data Input to Precharge
(write recovery)
t
WR
2
2
CLK
Data In to Active/Refresh
t
DAL
t
DQW
5
5
CLK
DQM Write Mask Latency
0
0
CLK
AC Characteristics
(cont’d)
1, 2
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
CC
= 3.3 V
±
0.3 V,
t
T
= 1 ns
Parameter
Symbol
Limit Values
Unit
Note
-8
PC100-222
-8B
PC100-323
min.
max.
min.
max.
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