參數(shù)資料
型號(hào): HYS72V32220GU-75-C2
廠商: INFINEON TECHNOLOGIES AG
英文描述: 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
中文描述: 3.3伏16米x 64/72-Bit 1銀行128MByte SDRAM的模塊3.3伏32M的x 64/72-Bit 2銀行256MB的內(nèi)存模塊168引腳無緩沖DIMM模塊
文件頁數(shù): 9/20頁
文件大?。?/td> 137K
代理商: HYS72V32220GU-75-C2
HYS 64/72V16300/32220GU
SDRAM-Modules
INFINEON Technologies
9
9.01
AC Characteristics
3), 4)
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
= 3.3 V
±
0.3 V,
t
T
= 1 ns
Parameter
Symbol
Limit Values
Unit
Note
-7
PC133-222
-7.5
PC133-333
-8
PC100-222
min.
max.
min.
max.
min.
max.
Clock and Access Time
Clock Cycle Time
CAS Latency = 3
CAS Latency = 2
t
CK
7.5
7.5
7.5
10
10
10
ns
ns
System Frequency
CAS Latency = 3
CAS Latency = 2
f
CK
133
133
133
100
100
100
MHz
MHz
Clock Access Time
CAS Latency = 3
CAS Latency = 2
t
AC
5.4
5.4
5.4
6
6
6
ns
ns
4), 5)
Clock High Pulse Width
t
CH
t
CL
2.5
2.5
3
ns
6)
Clock Low Pulse Width
2.5
2.5
3
ns
6)
Setup & Hold Parameters
Input Setup Time
t
IS
t
IH
t
SB
1.5
1.5
2
ns
7)
Input Hold Time
0.8
0.8
1
ns
7)
Power Down Mode Entry
Time
1
1
1
CLK
8)
Power Down Mode Exit
Setup Time
t
PDE
1
1
1
CLK
9)
Mode Register Setup Time
Transition Time (rise and fall)
t
T
t
RSC
2
2
2
CLK
1
1
1
ns
Common Parameters
RAS to CAS Delay
t
RCD
t
RP
t
RAS
t
RC
t
RRD
15
20
20
ns
Precharge Time
15
20
20
ns
Active Command Period
42
100k
45
100k
50
100k
ns
Cycle Time
60
67.5
70
ns
Bank-to-Bank Delay Time
14
15
16
ns
相關(guān)PDF資料
PDF描述
HYS64V16302GU-75-C2 3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
HYS64V16302GU-75-D 3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
HYS64V16302GU-7-D 3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
HYS64V16302GU-8-C2 3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
HYS64V16302GU 3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
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