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參數(shù)資料
| 型號： | HYS72V64220GU-7.5-D |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC |
| 中文描述： | 內(nèi)存| 64MX72 |的CMOS |內(nèi)存| 168線|塑料 |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 274K |
| 代理商： | HYS72V64220GU-7.5-D |
HYS 64/72V64220GU
SDRAM-Modules
INFINEON Technologies
5
9.01
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
min.
max.
Input / Output voltage relative to V
SS
Power supply voltage on V
DD
Storage temperature range
V
IN,
V
OUT
–
1.0
4.6
V
V
DD
–
1.0
4.6
V
T
STG
-55
+150
o
C
Power dissipation per SDRAM component
P
D
–
1
W
Data out current (short circuit)
I
OS
–
50
mA
Permanent device damage may occur if
“
Absolute Maximum Ratings
”
are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
min.
max.
V
DD
+ 0.3
0.8
Input High Voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
Input Low Voltage
Output High Voltage (
I
OUT
=
–
4.0 mA)
Output Low Voltage (
I
OUT
= 4.0 mA)
Input Leakage Current, any input
(0 V <
V
IN
< 3.6 V, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
–
0.5
V
2.4
–
V
–
0.4
V
μ
A
–
40
40
I
O(L)
–
40
40
μ
A
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
max.
64M
×
64
105
max.
64M
×
72
144
Input Capacitance
(
A0 to A11, BA0, BA1, RAS, CAS, WE)
C
I1
pF
Input Capacitance (CS0 - CS3)
C
I2
C
ICL
C
I3
C
I4
C
IO
C
SC
C
SD
32
40
pF
Input Capacitance (CLK0 - CLK3)
40
43
pF
Input Capacitance (CKE0, CKE1)
65
72
pF
Input Capacitance (DQMB0 - DQMB7)
20
25
pF
Input/Output Capacitance (DQ0 - DQ63, CB0 - CB7)
17
17
pF
Input Capacitance (SCL, SA0-2)
8
8
pF
Input/Output Capacitance
8
8
pF
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