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參數(shù)資料
| 型號： | HZIP23-P-1.27H |
| 廠商： | Toshiba Corporation |
| 英文描述： | Intelligent Power Device High Voltage Monolithic Silicon Power IC |
| 中文描述： | 智能功率器件單片硅高壓功率IC |
| 文件頁數(shù)： | 11/21頁 |
| 文件大?。?/td> | 240K |
| 代理商： | HZIP23-P-1.27H |
TENTATIVE TPD4113K
2005-05-20
11
Description of Protection Function
(1) Over current protection
This product incorporates the over current protection circuit to protect itself against over current at
startup or when a motor is locked. This protection function detects voltage generated in the current
detection resistor connected to the IS pin. When this voltage exceeds V
R
=
0.5 V (typ.), the IGBT
output, which is on, temporarily shuts down after a dead time , preventing any additional current
from flowing to this product. The next all “L” signal releases the shutdown state.
(2) Under voltage protection
This product incorporates the under voltage protection circuit to prevent the IGBT from operating in
unsaturated mode when the V
CC
voltage or the V
BS
voltage drops.
When the V
CC
power supply falls to this product internal setting (V
CC
UVD
=
11 V typ.), all IGBT
outputs shut down regardless of the input. This protection function has hysteresis. When the
V
CC
UVR (
=
11.5 V typ.) reaches 0.5 V higher than the shutdown voltage, this product is
automatically restored and the IGBT is turned on again by the input.
When the V
BS
supply voltage drops (V
BS
UVD
=
9 V typ.), the high-side IGBT output shuts down.
When the V
BS
UVR (
=
9.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is
turned on again by the input signal.
(3) Thermal shutdown
This product incorporates the thermal shutdown circuit to protect itself against the abnormal state
when its temperature rises excessively.
When the temperature of this chip rises due to external causes or internal heat generation and the
internal setting TSD reaches 150°C, all IGBT outputs shut down regardless of the input. This
protection function has hysteresis (
TSD
=
50
°
C typ.). When the chip temperature falls to TSD
TSD, the chip is automatically restored and the IGBT is turned on again by the input.
Because the chip contains just one temperature detection location, when the chip heats up due to the
IGBT, for example, the differences in distance from the detection location in the IGBT (the source of
the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the
chip may rise higher than the thermal shutdown temperature when the circuit started to operate.
Safe Operating Area
Note 1: The above safe operating areas are Tj
=
135
°
C (Figure 1) and Tc
=
95
°
C (Figure 2). If the temperature
exceeds thsese, the safe operation areas reduce.
Note 2: The above safe operating areas include the over current protection operation area.
0.83
0
450
P
Power supply voltage V
BB
(V)
Figure 1 SOA at Tj
=
135
°
C
0
0.9
0
450
P
Power supply voltage V
BB
(V)
Figure 2 SOA at Tc
=
95
°
C
0
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