參數(shù)資料
型號(hào): HZM6.8WA
廠商: Hitachi,Ltd.
英文描述: Silicon Epitaxial Planar Zener Diode for Surge Absorb(用于浪涌電流吸收的平面外延齊納二極管)
中文描述: 硅外延平面齊納二極管浪涌吸收(用于浪涌電流吸收的平面外延齊納二極管)
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 30K
代理商: HZM6.8WA
HZM6.8WA
2
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Value
Unit
Power dissipation
Pd
*1
200
mW
Junction temperature
Tj
150
°
C
°
C
Storage temperature
Note
1. Two device total, See Fig.2.
Tstg
-55 to +150
Electrical Characteristics (Ta = 25
°
C)
*1
Item
Zener voltage
Symbol
V
Z
I
R
C
Min
6.47
Typ
Max
7.00
Unit
V
Test Condition
I
Z
= 5 mA, 40ms pulse
V
R
= 3.5V
V
R
= 0V, f = 1 MHz
I
Z
= 5 mA
C =150pF, R = 330
, Both forward and
reverse direction 10 pulse
Reverse current
2
μ
A
Capacitance
130
pF
Dynamic resistance
r
d
30
ESD-Capability
*2
30
kV
Notes
1. Per one device.
2. Failure criterion ; IR2
μ
A at VR = 3.5V.
相關(guān)PDF資料
PDF描述
HZM6.8ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb(用于浪涌電流吸收的平面外延齊納二極管)
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HZM6.8ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb(用于浪涌電流吸收的平面外延齊納二極管)
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