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參數(shù)資料
| 型號： | HZM62ZFA |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | TNC CRIMP BLKHD JACK/RG-58 |
| 中文描述： | 硅外延平面齊納二極管浪涌吸收 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 30K |
| 代理商： | HZM62ZFA |
HZM6.2ZWA
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
*1
200
mW
Junction temperature
Tj
150
°
C
°
C
Storage temperature
Note
1. Two device total, See Fig.2.
Tstg
-55 to +150
Electrical Characteristics (Ta = 25°C)
*1
Item
Zener voltage
Symbol
V
Z
I
R
C
Min
5.90
Typ
—
Max
6.50
Unit
V
Test Condition
I
Z
= 5 mA, 40ms pulse
V
R
= 5.5V
V
R
= 0V, f = 1 MHz
I
Z
= 5 mA
C =150pF, R = 330
, Both forward and
reverse direction 10 pulse
Reverse current
—
—
3
μ
A
Capacitance
—
8.0
8.5
pF
Dynamic resistance
r
d
—
—
—
60
ESD-Capability
*2
13
—
—
kV
Notes
1. Per one device.
2. Failure criterion ; IR>3
μ
A at VR = 5.5V.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HZM68ZMFA | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HZM6.8ZMFA | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HZM6.8FA | surface mount silicon Zener diodes |
| HZM6.8MFA | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HZM68ZWA | surface mount silicon Zener diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HZM62ZWA | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| HZM68FA | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| HZM68MFA | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Planar Zener Diode for Surge Absorb |
| HZM68MWATL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Planar Zener Diode for Surge Absorb |
| HZM68ZMFA | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Planar Zener Diode for Surge Absorb |
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