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參數(shù)資料
| 型號(hào)： | HZN6.8ZMFA |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | HZN6.8ZMFA |
HZN6.8ZMFA
Rev.0, Nov. 2001, page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
*
1
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Four device total, See Fig.2.
Electrical Characteristics *
1
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Zener voltage
V
Z
I
R
C
6.47
—
7.00
V
μ
A
pF
kV
I
Z
= 5 mA, 40ms pulse
V
R
= 3.5V
V
R
= 0V, f = 1 MHz
I
Z
= 5 mA
C =150 pF, R = 330
, Both forward and
reverse direction 10 pulse
Reverse current
—
—
0.5
Capacitance
—
—
25
Dynamic resistance
r
d
—
—
—
30
ESD-Capability
*
2
*
3
25
—
—
Notes
1. Per one device.
2. Failure criterion ; I
R
>
0.5
μ
A at V
R
= 3.5 V.
3. Between cathode and anode.
Month Code
Month of Manufacture
Month Code
Month of Manufacture
Month Code
January
A
July
G
February
B
August
H
March
C
September
J
April
D
October
K
May
E
November
L
June
F
December
M
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