參數(shù)資料
型號(hào): HZS12L2
廠商: Renesas Technology Corp.
元件分類: 參考電壓二極管
英文描述: Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
中文描述: 250 的低電流運(yùn)算,低反向泄露,低噪聲穩(wěn)壓二極管
文件頁數(shù): 2/7頁
文件大小: 74K
代理商: HZS12L2
HZS-L Series
Rev.2.00, Jan.06.2003, page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
400
mW
Junction temperature
Tj
200
°C
Storage temperature
Tstg
–55 to +175
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
Reverse Current
Dynamic Resistance
V
Z
(V)
*
1
Test
Condition
I
R
(
μ
A)
Test
Condition
r
d
(
)
Test
Condition
Type
Grade
Min
Max
I
Z
(mA)
Max
V
R
(V)
Max
I
Z
(mA)
HZS6L
A1
5.2
5.5
0.5
1
2.0
150
0.5
A2
5.3
5.6
A3
5.4
5.7
B1
5.5
5.8
80
0.5
B2
5.6
5.9
B3
5.7
6.0
C1
5.8
6.1
60
0.5
C2
6.0
6.3
C3
6.1
6.4
HZS7L
A1
6.3
6.6
0.5
1
3.5
60
0.5
A2
6.4
6.7
A3
6.6
6.9
B1
6.7
7.0
B2
6.9
7.2
B3
7.0
7.3
C1
7.2
7.6
C2
7.3
7.7
Note: 1. Tested with DC.
C3
7.5
7.9
相關(guān)PDF資料
PDF描述
HZS12L3 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
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HZS12LA3 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
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HZS12LA3 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Low Noise Application
HZS12LB1 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Low Noise Application