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參數(shù)資料
| 型號： | HZS12NB1 |
| 廠商： | Renesas Technology Corp. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 74K |
| 代理商： | HZS12NB1 |
HZS-L Series
Rev.2.00, Jan.06.2003, page 3 of 6
Zener Voltage
Reverse Current
Dynamic Resistance
V
Z
(V)
*
1
Test
Condition
I
R
(
μ
A)
Test
Condition
r
d
(
)
Test
Condition
Type
Grade
Min
Max
I
Z
(mA)
Max
V
R
(V)
Max
I
Z
(mA)
HZS9L
A1
7.7
8.1
0.5
1
6.0
60
0.5
A2
7.9
8.3
A3
8.1
8.5
B1
8.3
8.7
B2
8.5
8.9
B3
8.7
9.1
C1
8.9
9.3
C2
9.1
9.5
C3
9.3
9.7
HZS11L
A1
9.5
9.9
0.5
1
8.0
80
0.5
A2
9.7
10.1
A3
9.9
10.3
B1
10.2
10.6
B2
10.4
10.8
B3
10.7
11.1
C1
10.9
11.3
C2
11.1
11.6
C3
11.4
11.9
HZS12L
A1
11.6
12.1
0.5
1
10.5
80
0.5
A2
11.9
12.4
A3
12.2
12.7
B1
12.4
12.9
B2
12.6
13.1
B3
12.9
13.4
C1
13.2
13.7
C2
13.5
14.0
C3
13.8
14.3
HZS15L
1
14.1
14.7
0.5
1
13.0
80
0.5
2
14.5
15.1
3
14.9
15.5
HZS16L
1
15.3
15.9
0.5
1
14.0
80
0.5
2
15.7
16.5
Note: 1. Tested with DC.
3
16.3
17.1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HZS12NB2 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS12N-B2(TD-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| HZS12NB3 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS12NB4 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS13NB1 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
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