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參數(shù)資料
| 型號(hào)： | HZS12NB3 |
| 廠商： | Renesas Technology Corp. |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 74K |
| 代理商： | HZS12NB3 |
HZS-L Series
Rev.2.00, Jan.06.2003, page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
400
mW
Junction temperature
Tj
200
°C
Storage temperature
Tstg
–55 to +175
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
Reverse Current
Dynamic Resistance
V
Z
(V)
*
1
Test
Condition
I
R
(
μ
A)
Test
Condition
r
d
(
)
Test
Condition
Type
Grade
Min
Max
I
Z
(mA)
Max
V
R
(V)
Max
I
Z
(mA)
HZS6L
A1
5.2
5.5
0.5
1
2.0
150
0.5
A2
5.3
5.6
A3
5.4
5.7
B1
5.5
5.8
80
0.5
B2
5.6
5.9
B3
5.7
6.0
C1
5.8
6.1
60
0.5
C2
6.0
6.3
C3
6.1
6.4
HZS7L
A1
6.3
6.6
0.5
1
3.5
60
0.5
A2
6.4
6.7
A3
6.6
6.9
B1
6.7
7.0
B2
6.9
7.2
B3
7.0
7.3
C1
7.2
7.6
C2
7.3
7.7
Note: 1. Tested with DC.
C3
7.5
7.9
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| HZS12NB4 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HZS12NB4 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS13NB1 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS13NB2 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS13N-B2 | 制造商:Renesas Electronics Corporation 功能描述: |
| HZS13N-B2(TD-E) | 制造商:Renesas Electronics Corporation 功能描述: |
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