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參數(shù)資料
| 型號(hào)： | HZS30N |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply(用于穩(wěn)壓的平面外延齊納二極管) |
| 中文描述： | 硅外延平面穩(wěn)壓二極管的穩(wěn)壓電源（用于穩(wěn)壓的平面外延齊納二極管） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | HZS30N |
HZS-N Series
Silicon Epitaxial Planar Zener Diodes for Stabilized Power
Supply
ADE-208-124 (Z)
Preliminary
Rev. 0
Aug. 1993
Features
Low leakage, low zener impedance and maximum power dissipation of 400mW are ideally suited for
stabilized power supply, etc.
Wide spectrum from 1.88V through 38.52V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
Mark
Package Code
HZS-N Series
Type No.
MHD
Outline
1. Cathode
2. Anode
Cathode band
Type No.
1
2
2
B
7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
400
mW
Junction temperature
Tj
200
°C
Storage temperature
Tstg
–55 to +175
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HZS30NB1 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS30NB2 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS30N-B2(TD-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| HZS30NB3 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS30N-B3(TD-E) | 制造商:Renesas Electronics Corporation 功能描述: |
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