參數(shù)資料
型號: IBMB3N16734HCB-75AT
英文描述: x72 SDRAM Module
中文描述: x72內(nèi)存模塊
文件頁數(shù): 13/20頁
文件大小: 378K
代理商: IBMB3N16734HCB-75AT
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 13 of 20
IBM13N16644HCC
IBM13N16734HCC
16M x 64/72 Two-Bank Unbuffered SDRAM Module
19L7296.E93875B
12/99
AC Characteristics
(T
A
= 0 to +70
°
C, V
DD
= 3.3V
±
0.3V)
1. An initial pause of 200
μ
s, with DQMB0-7 and CKE0-CKE1 held high, is required after power-up. A Pre-
charge All Banks command must be given followed by a minimum of eight Auto (CBR) Refresh cycles
before or after the Mode Register Set operation.
2. The Transition time is measured between V
IH
and V
IL
(or between V
IL
and V
IH
).
3. In addition to meeting the transition rate specification, the clock and CKE must transit between V
IH
and
V
IL
(or between V
IL
and V
IH
) in a monotonic manner.
4. Load Circuit A: AC timing tests have V
IL
= 0.4 V and V
IH
= 2.4 V with the timing referenced to the 1.40V
crossover point
5. Load Circuit A: AC measurements assume t
T
=1.0 ns.
6. Load Circuit B: AC timing tests have V
IL
= 0.8 V and V
IH
= 2.0 V with the timing referenced to the 1.40V
crossover point
7. Load Circuit B: AC measurements assume t
T
=1.2 ns.
AC Characteristics Diagrams
Output
Input
Clock
t
OH
t
SETUP
t
HOLD
t
AC
t
LZ
1.4V
1.4V
V
IL
1.4V
t
T
Vtt=1.4V
Output
50
50pF
Z
o
= 50
AC Output Load Circuit (A)
t
CKH
t
CKL
Output
50pF
Z
o
= 50
AC Output Load Circuit (B)
V
IH
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