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參數(shù)資料
| 型號： | IC41C8512-60T |
| 英文描述： | 512K x 8 bit Dynamic RAM with EDO Page Mode |
| 中文描述： | 為512k × 8位動態(tài)隨機存儲器與江戶頁面模式 |
| 文件頁數(shù)： | 8/21頁 |
| 文件大小： | 232K |
| 代理商： | IC41C8512-60T |
IC41C8512
IC41LV8512
8
Integrated Circuit Solution Inc.
DR029-0A 09/28/2001
AC CHARACTERISTICS
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-35
-50
-60
Symbol
Parameter
Min. Max.
Min. Max.
Min. Max.
Units
t
RC
t
RAC
t
CAC
t
AA
t
RAS
t
RP
t
CAS
t
CP
t
CSH
t
RCD
t
ASR
t
RAH
t
ASC
t
CAH
t
AR
Random READ or WRITE Cycle Time
Access Time from
RAS
(6, 7)
Access Time from
CAS
(6, 8, 15)
Access Time from Column-Address
(6)
RAS
Pulse Width
RAS
Precharge Time
CAS
Pulse Width
(26)
CAS
Precharge Time
(9, 25)
CAS
Hold Time
(21)
RAS
to
CAS
Delay Time
(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time
(20)
Column-Address Hold Time
(20)
Column-Address Hold Time
(referenced to
RAS
)
RAS
to Column-Address Delay Time
(11)
Column-Address to
RAS
Lead Time
RAS
to
CAS
Precharge Time
RAS
Hold Time
(27)
CAS
to Output in Low-Z
(15, 29)
CAS
to
RAS
Precharge Time
(21)
Output Disable Time
(19, 28, 29)
Output Enable Time
(15, 16)
OE
HIGH Hold Time from
CAS
HIGH
OE
HIGH Pulse Width
OE
LOW to
CAS
HIGH Setup Time
Read Command Setup Time
(17, 20)
Read Command Hold Time
(referenced to
RAS
)
(12)
Read Command Hold Time
(referenced to
CAS
)
(12, 17, 21)
Write Command Hold Time
(17, 27)
Write Command Hold Time
(referenced to
RAS
)
(17)
Write Command Pulse Width
(17)
WE
Pulse Widths to Disable Outputs
Write Command to
RAS
Lead Time
(17)
Write Command to
CAS
Lead Time
(17, 21)
Write Command Setup Time
(14, 17, 20)
Data-in Hold Time (referenced to
RAS
)
60
—
—
—
35
20
6
5
35
11
0
6
0
6
30
—
35
10
18
10K
—
10K
—
—
28
—
—
—
—
—
90
—
—
—
50
30
8
8
50
19
0
8
0
8
40
—
50
14
25
10K
—
10K
—
—
36
—
—
—
—
—
110
—
—
—
60
40
10
10
60
20
0
10
0
10
40
—
60
15
30
10K
—
10K
—
—
45
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RAD
t
RAL
t
RPC
t
RSH
t
CLZ
t
CRP
t
OD
t
OE
t
OEHC
t
OEP
t
OES
t
RCS
t
RRH
10
18
0
8
3
5
3
0
10
10
5
0
0
20
—
—
—
—
—
12
10
—
—
—
—
—
14
25
0
14
3
5
3
0
10
10
5
0
0
25
—
—
—
—
—
12
15
—
—
—
—
—
15
30
0
15
3
5
3
—
10
10
5
0
0
30
—
—
—
—
—
12
15
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RCH
0
—
0
—
0
—
ns
t
WCH
t
WCR
5
30
—
—
8
40
—
—
10
50
—
—
ns
ns
t
WP
t
WPZ
t
RWL
t
CWL
t
WCS
t
DHR
5
10
8
8
0
30
—
—
—
—
—
—
8
10
14
14
0
40
—
—
—
—
—
—
10
10
15
15
0
40
—
—
—
—
—
—
ns
ns
ns
ns
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC41C8512-60TI | 512K x 8 bit Dynamic RAM with EDO Page Mode |
| IC41LV8512-50T | 10:1 LVDS Serdes Transmitter 100-400 Mbps 28-SSOP -40 to 85 |
| IC41LV8512-50TI | 512K x 8 bit Dynamic RAM with EDO Page Mode |
| IC41LV8512-60K | Replaced by SN65LV1023A : 10:1 LVDS Serdes Transmitter 300-660 Mbps 28-SSOP -40 to 85 |
| IC41LV8512-60KI | 512K x 8 bit Dynamic RAM with EDO Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC41C8512-60TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 8 bit Dynamic RAM with EDO Page Mode |
| IC41C8513 | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 8 bit Dynamic RAM with Fast Page Mode |
| IC41C8513-35K | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 8 bit Dynamic RAM with Fast Page Mode |
| IC41C8513-35T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 8 bit Dynamic RAM with Fast Page Mode |
| IC41C8513-50K | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 8 bit Dynamic RAM with Fast Page Mode |
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