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參數(shù)資料
| 型號： | IC41C8513-35T |
| 英文描述： | 512K x 8 bit Dynamic RAM with Fast Page Mode |
| 中文描述： | 為512k × 8位動態(tài)隨機存儲器和快速頁面模式 |
| 文件頁數(shù)： | 5/17頁 |
| 文件大?。?/td> | 240K |
| 代理商： | IC41C8513-35T |
IC41C8513 and IC41LV8513
DR028-0A 09/25/2001
5
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
1.0 to +7.0
0.5 to +4.6
1.0 to +7.0
0.5 to +4.6
50
1
0 to +70
55 to +125
Unit
V
T
Voltage on Any Pin Relative to GND
5V
V
3.3V
5V
3.3V
V
CC
Supply Voltage
V
I
OUT
P
D
T
A
T
STG
Output Current
Power Dissipation
Commercial Operation Temperature
Storage Temperature
mA
W
o
C
o
C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
4.5
3.0
2.4
2.0
1.0
0.3
0
5.0
3.3
5.5
3.6
V
3.3V
5V
3.3V
5V
3.3V
V
IH
Input High Voltage
V
CC
+ 1.0
V
CC
+ 0.3
0.8
0.8
70
V
V
IL
Input Low Voltage
V
T
A
Commercial Ambient Temperature
o
C
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A9
Input Capacitance:
RAS
,
CAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O7
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
o
C, f = 1 MHz.
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