參數(shù)資料
型號(hào): IC41LV8512-50KI
英文描述: 512K x 8 bit Dynamic RAM with EDO Page Mode
中文描述: 為512k × 8位動(dòng)態(tài)隨機(jī)存儲(chǔ)器與江戶頁面模式
文件頁數(shù): 6/21頁
文件大?。?/td> 232K
代理商: IC41LV8512-50KI
IC41C8512
IC41LV8512
6
Integrated Circuit Solution Inc.
DR029-0A 09/28/2001
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
–1.0 to +7.0
–0.5 to +4.6
–1.0 to +7.0
–0.5 to +4.6
50
1
0 to +70
–40 to +85
–55 to +125
V
3.3V
5V
3.3V
V
CC
Supply Voltage
V
I
OUT
P
D
T
A
Output Current
Power Dissipation
Commercial Operation Temperature
Industrial Operationg Temperature
Storage Temperature
mA
W
°C
°C
°C
T
STG
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
4.5
3.0
2.4
2.0
–1.0
–0.3
0
–40
5.0
3.3
5.5
3.6
V
3.3V
5V
3.3V
5V
3.3V
V
IH
Input High Voltage
V
CC
+ 1.0
V
CC
+ 0.3
0.8
0.8
70
85
V
V
IL
Input Low Voltage
V
T
A
Commercial Ambient Temperature
Industrial Ambient Temperature
°C
°C
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A9
Input Capacitance:
RAS
,
CAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O7
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz.
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