參數(shù)資料
型號(hào): IC41LV8512-60KI
英文描述: 512K x 8 bit Dynamic RAM with EDO Page Mode
中文描述: 為512k × 8位動(dòng)態(tài)隨機(jī)存儲(chǔ)器與江戶(hù)頁(yè)面模式
文件頁(yè)數(shù): 16/21頁(yè)
文件大?。?/td> 232K
代理商: IC41LV8512-60KI
IC41C8512
IC41LV8512
16
Integrated Circuit Solution Inc.
DR029-0A 09/28/2001
EDO-PAGE-MODE READ-WRITE CYCLE
(LATE WRITE and READ-MODIFY WRITE Cycles)
Note:
1. t
PC
is for LATE write cycles only. t
PC
can be measured from falling edge of
CAS
to falling edge of
CAS
, or from rising edge of
CAS
to rising edge of
CAS
. Both measurements must meet the t
PC
specifications.
t
RASP
t
RP
ADDRESS
CAS
RAS
Row
Row
t
CRP
t
RCD
t
CSH
t
CP
t
CAH
t
CAS,
t
CLCH
t
RAL
t
RSH
t
CP
t
CP
t
RAH
t
RAD
t
AR
t
ASR
Column
Column
t
CAH
t
CAH
Column
t
ASC
t
ASC
t
CAS,
t
CLCH
t
CAS,
t
CLCH
OE
I/O
WE
t
ASC
t
RWD
t
RCS
t
CWL
t
WP
t
AWD
t
CWD
t
DH
t
DS
t
CAC
t
CLZ
t
AWD
t
CWD
t
CWL
t
WP
t
AWD
t
CWD
t
CWL
t
WP
t
RWL
Open
Open
D
IN
t
OD
D
OUT
t
OE
t
OE
t
OE
t
OD
t
OEH
t
OD
t
DH
t
DS
t
CPA
t
AA
t
CAC
t
CLZ
D
IN
D
OUT
t
DH
t
DS
t
CAC
t
CLZ
D
IN
D
OUT
t
CPA
t
AA
t
RAC
t
AA
t
PC
/ t
PRWC
(1)
Undefined
Don’t Care
相關(guān)PDF資料
PDF描述
IC41LV8512-60T 512K x 8 bit Dynamic RAM with EDO Page Mode
IC41LV8512-60TI 512K x 8 bit Dynamic RAM with EDO Page Mode
IC41LV8512 Transient Voltage Suppression Differential Transceiver 8-SOIC -40 to 85
IC41LV8512-35K Transient Voltage Suppression Differential Transceiver 8-SOIC -40 to 85
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