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參數(shù)資料
| 型號(hào)： | IC41UV4105-50J |
| 英文描述： | 1Mx4 bit Dynamic RAM with Fast Page Mode |
| 中文描述： | 1Mx4位動(dòng)態(tài)RAM的快速頁(yè)面模式 |
| 文件頁(yè)數(shù)： | 5/17頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | IC41UV4105-50J |
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IC41UV4105
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
5
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
0.5 to +3.4
Unit
V
T
Voltage on Any Pin Relative to GND
V
V
CC
Supply Voltage
0.5 to +3.4
V
I
OUT
P
D
T
A
T
STG
Output Current
Power Dissipation
Commercial Operation Temperature
Storage Temperature
50
1
mA
W
o
C
o
C
0 to +70
55 to +125
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
2.4
2.6
2.8
V
V
IH
Input High Voltage
1.8
V
CC
+ 0.3
V
V
IL
Input Low Voltage
0.3
0.6
V
T
A
Commercial Ambient Temperature
0
70
o
C
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A9
Input Capacitance:
RAS
,
CAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O3
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
o
C, f = 1 MHz.
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