- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360716 > IC41UV4105-70T 1Mx4 bit Dynamic RAM with Fast Page Mode PDF資料下載
參數(shù)資料
| 型號(hào)： | IC41UV4105-70T |
| 英文描述： | 1Mx4 bit Dynamic RAM with Fast Page Mode |
| 中文描述： | 1Mx4位動(dòng)態(tài)RAM的快速頁(yè)面模式 |
| 文件頁(yè)數(shù)： | 16/17頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | IC41UV4105-70T |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)當(dāng)前第16頁(yè)第17頁(yè)
IC41UV4105
16
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
HIDDEN REFRESH CYCLE
(1)
(
WE
= HIGH;
OE
= LOW)
CBR REFRESH CYCLE
(Addresses;
WE
,
OE
= DON'T CARE)
t
RAS
t
RAS
t
RP
t
RP
I/O
CAS
RAS
Open
t
CP
t
RPC
t
CSR
t
CHR
t
RPC
t
CSR
t
CHR
t
RAS
t
RAS
t
RP
CAS
RAS
t
CRP
t
RCD
t
RSH
t
CHR
t
AR
t
ASC
t
RAD
t
RAH
ADDRESS
Row
Column
t
ASR
t
RAL
t
CAH
I/O
Open
Open
Valid Data
t
AA
t
CAC
t
RAC
t
CLZ
t
OFF
(2)
OE
t
OE
t
ORD
t
OD
Don
’
t Care
Don
’
t Care
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case,
WE
= LOW and
OE
= HIGH.
2. t
OFF
is referenced from rising edge of
RAS
or
CAS
, whichever occurs last.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC42S16100 | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-5T | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-5TG | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-5TI | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-5TIG | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC4215SA342B | 制造商:n/a 功能描述:_ |
| IC4215SA34B | 制造商:n/a 功能描述:_ |
| IC-422-AGG | 制造商:Samtec Inc 功能描述:CONN DIP SCKT SKT 22 POS 2.54MM SLDR ST TH - Bulk |
| IC-422-AGT | 制造商:Samtec Inc 功能描述:CONN DIP SCKT SKT 22 POS 2.54MM SLDR ST TH - Bulk |
| IC-422-ATT | 制造商:Samtec Inc 功能描述:CONN DIP SCKT SKT 22 POS 2.54MM SLDR ST TH - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。