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參數(shù)資料
| 型號： | IC42S16100-6TIG |
| 英文描述： | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 為512k × 16位× 2組（16兆）同步動(dòng)態(tài)RAM |
| 文件頁數(shù)： | 26/78頁 |
| 文件大小： | 789K |
| 代理商： | IC42S16100-6TIG |
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IC42S16100
26
Integrated Circuit Solution Inc.
DR024-0D 06/25/2004
Write With Auto-Precharge
The write with auto-precharge command first executes a
burst write operation and then puts the selected bank in the
precharged state automatically. After the precharge
completes the bank goes to the idle state. Thus this
command performs a write command and a precharge
command in a single operation.
During this operation, the delay period (t
DAL
) between the
last burst data input and the completion of the precharge
operation differs depending on the
CAS
latency setting.
The delay (t
DAL
) is t
RP
plus one CLK period. That is, the
precharge operation starts one clock period after the last
burst data input.
CAS
Latency
t
DAL
3
2
1CLK
+t
RP
1CLK
+t
RP
Therefore, the selected bank can be made active after a
delay of t
DAL
.
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length is
set to full page.
t
RP
t
DAL
PRECHARGE START
I/O
WRITE A0
COMMAND
CLK
ACT 0
WRITE WITH AUTO-PRECHARGE
(BANK 0)
t
RP
t
DAL
PRECHARGE START
WRITE A0
COMMAND
I/O
CLK
D
IN
0
D
IN
1
D
IN
2
D
IN
3
ACT 0
WRITE WITH AUTO-PRECHARGE
(BANK 0)
D
IN
0
D
IN
1
D
IN
2
D
IN
3
CAS
latency = 2, burst length = 4
CAS
latency = 3, burst length = 4
相關(guān)PDF資料 |
PDF描述 |
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| IC42S16100-7T | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-7TG | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-7TI | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-7TIG | 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16400-7TIG | 1M x 16Bit x 4 Banks (64-MBIT) SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC42S16100-7T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-7TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-7TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16100-7TIG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S16101 | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 16 Bit x 2 Banks (16-MBIT) SDRAM |
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