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參數(shù)資料
| 型號(hào)： | IC61C256AH-25TI |
| 英文描述： | 32K x 8 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 32K的× 8高速CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 8/9頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | IC61C256AH-25TI |
IC61C256AH
8
Integrated Circuit Solution Inc.
AHSR010-0D 4/19/2002
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
WRITE CYCLE NO. 2
(
CE
Controlled)
(1,2)
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
≥
V
IH
.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IC61C256AH-25UI | 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:32K x 8 HIGH-SPEED CMOS STATIC RAM |
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| IC61C6416-10T | 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:64K X 16 HIGH-SPEED CMOS STATIC RAM |
| IC61C6416-12K | 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:64K X 16 HIGH-SPEED CMOS STATIC RAM |
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