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參數(shù)資料
| 型號： | IC61LV12816-10K |
| 英文描述： | 128K x 16 Hight Speed SRAM with 3.3V |
| 中文描述： | 128K的× 16 Hight高速SRAM與3.3V |
| 文件頁數(shù)： | 9/13頁 |
| 文件大小： | 150K |
| 代理商： | IC61LV12816-10K |
IC61LV12816
Integrated Circuit Solution, Inc.
AHSR024-0B
04/23/2004
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Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least
one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CE
)
[
(
LB
) = (
UB
)
]
(
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1
(1 ,2)
(
CE
Controlled,
OE
is HIGH or LOW)
DATA UNDEFINED
t
WC
VALID ADDRESS
t
SCE
t
PWE1
t
PWE2
t
AW
t
HA
HIGH-Z
t
PWB
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN
DATA
IN
VALID
t
LZWE
t
SD
相關PDF資料 |
PDF描述 |
|---|---|
| IC61LV12816-10KI | 128K x 16 Hight Speed SRAM with 3.3V |
| IC61LV12816-10T | 128K x 16 Hight Speed SRAM with 3.3V |
| IC61LV12816-10TI | 128K x 16 Hight Speed SRAM with 3.3V |
| IC61LV12816-12B | 128K x 16 Hight Speed SRAM with 3.3V |
| IC61LV12816-12BI | 128K x 16 Hight Speed SRAM with 3.3V |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IC61LV12816-10KI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 16 Hight Speed SRAM with 3.3V |
| IC61LV12816-10T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 16 Hight Speed SRAM with 3.3V |
| IC61LV12816-10TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 16 Hight Speed SRAM with 3.3V |
| IC61LV12816-12B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 16 Hight Speed SRAM with 3.3V |
| IC61LV12816-12BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 16 Hight Speed SRAM with 3.3V |
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