參數(shù)資料
型號: IC61LV256-8T
英文描述: 32K x 8 Hight Speed SRAM with 3.3V
中文描述: 32K的× 8 Hight高速SRAM與3.3V
文件頁數(shù): 6/9頁
文件大?。?/td> 122K
代理商: IC61LV256-8T
IC61LV256
6
Integrated Circuit Solution Inc.
AHSR027-0B
11/28/2003
DATA VALID
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACE
t
LZCE
t
HZOE
HIGH-Z
DATA VALID
ADDRESS
OE
CE
D
OUT
t
HZCE
READ CYCLE NO. 2
(1,3)
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE
,
CE
= V
IL
.
3. Address is valid prior to or coincident with
CE
LOW transitions.
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
相關(guān)PDF資料
PDF描述
IC61LV256-8TG 32K x 8 Hight Speed SRAM with 3.3V
IC61LV256-8TI 32K x 8 Hight Speed SRAM with 3.3V
IC61LV256-8TIG 32K x 8 Hight Speed SRAM with 3.3V
IC61LV256-10JG 32K x 8 Hight Speed SRAM with 3.3V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IC61LV256-8TG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 8 Hight Speed SRAM with 3.3V
IC61LV256-8TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K x 8 Hight Speed SRAM with 3.3V
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