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參數(shù)資料
| 型號(hào)： | IC61LV6416-10T |
| 英文描述： | 64K x 16 Hight Speed SRAM with 3.3V |
| 中文描述： | 64K的× 16 Hight高速SRAM與3.3V |
| 文件頁(yè)數(shù)： | 8/9頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | IC61LV6416-10T |
IC61LV6416
8
Integrated Circuit Solution Inc.
AHSR026-0A
09/12/2001
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least
one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CE
)
[
(
LB
) = (
UB
)
]
(
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
Controlled)
(1,2)
UNDEFINED
UNDEFINED
t
WC
t
SCE
t
PWB
t
AW
t
HA
HIGH-Z
HIGH-Z
t
PWE
t
HD
t
SA
t
HZWE
ADDRESS
CE
LB, UB
WE
WRITE
(1)
D
OUT
D
IN
t
LZWE
t
SD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC61LV6416-10TI | 64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-12B | 64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-12BI | 64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-12K | 64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-12KI | 78.7K 1% 100PPM TKF |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC61LV6416-10TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-12B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-12BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-12K | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-12KI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 16 Hight Speed SRAM with 3.3V |
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