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參數(shù)資料
| 型號(hào)： | IC61LV6416-15K |
| 英文描述： | 64K x 16 Hight Speed SRAM with 3.3V |
| 中文描述： | 64K的× 16 Hight高速SRAM與3.3V |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 95K |
| 代理商： | IC61LV6416-15K |
IC61LV6416
2
Integrated Circuit Solution Inc.
AHSR026-0A
09/12/2001
FEATURES
High-speed access time: 8, 10, 12, and 15 ns
CMOS low power operation
— 250 mW (typical) operating
— 250 μW (typical) standby
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
64K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
DESCRIPTION
The
ICSI
IC61LV6416 is a high-speed, 1,048,576-bit static
RAM organized as 65,536 words by 16 bits. It is fabricated
using
ICSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the memory.
A data byte allows Upper Byte (
UB
) and Lower Byte (
LB
)
access.
The IC61LV6416 is packaged in the JEDEC standard 44-pin
400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TF-
BGA.
FUNCTIONAL BLOCK DIAGRAM
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
A0-A15
CE
OE
WE
UB
LB
64K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC61LV6416-15T | 64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-15TI | 64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-8B | 64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-8BI | 64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-8K | RES,78.7,1/8W,1%,FXD,SMT,THKF,1206 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC61LV6416-15KI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-15T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-15TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-8B | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 16 Hight Speed SRAM with 3.3V |
| IC61LV6416-8BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:64K x 16 Hight Speed SRAM with 3.3V |
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